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FETToy
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
Version 1.2.2 - published on 16 Oct 2009
DOI: 10254/nanohub-r220.5 cite this
This tool is closed source.
RAVI CHARAN said:
0 0 PLG_RESOURCES_REVIEWS_LOGIN_TO_VOTE I`m an undergraduate student...
I liked this tool ,this is very much useful to me..
thanks a lot..............
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Thuy said:
No comment.
Hamidreza Hashempour said:
0 0 PLG_RESOURCES_REVIEWS_LOGIN_TO_VOTE Seems to me that Source/Drain/Gate control parameters (alpha) have incorrect default values for the cntfet module of this tool.
Since these parameters are the ratio of source/drain/gate capacitance to the total capacitance, their sum must be 1: now their sum is 0.88+0.035+0.035=0.95
The interactive.m file must be modified.
Regards,
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Anonymous said:
No comment.
manas desai said:
0 0 PLG_RESOURCES_REVIEWS_LOGIN_TO_VOTE Good way to look at different devices.
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steve mcqueen said:
0 0 PLG_RESOURCES_REVIEWS_LOGIN_TO_VOTE As an undergraduate student new to the field of nanotechnology I have found the entire Web site full of valuable information and the simulation tools easy to use. Thanks for providing this resource.
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Zhao Xu said:
No comment.