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FETToy
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
Version 1.2.2 - published on 16 Oct 2009
doi:10254/nanohub-r220.5 cite this
This tool is closed source.
5.0 out of 5 stars
RAVI CHARAN @ 03:12 PM on 17 Apr, 2008
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I`m an undergraduate student…I liked this tool ,this is very much useful to me.. thanks a lot…………..
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5.0 out of 5 stars
Thuy @ 10:49 AM on 14 Jun, 2007
No comment.
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4.0 out of 5 stars
Hamidreza Hashempour @ 05:44 PM on 12 Oct, 2006
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Seems to me that Source/Drain/Gate control parameters (alpha) have incorrect default values for the cntfet module of this tool.Since these parameters are the ratio of source/drain/gate capacitance to the total capacitance, their sum must be 1: now their sum is 0.88+0.035+0.035=0.95
The interactive.m file must be modified.
Regards,
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5.0 out of 5 stars
Anonymous @ 04:48 AM on 27 Sep, 2006
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5.0 out of 5 stars
manas desai @ 06:58 PM on 03 May, 2006
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Good way to look at different devices.Report abuse | Reply
5.0 out of 5 stars
steve mcqueen @ 11:08 AM on 21 Feb, 2006
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As an undergraduate student new to the field of nanotechnology I have found the entire Web site full of valuable information and the simulation tools easy to use. Thanks for providing this resource.Report abuse | Reply
5.0 out of 5 stars
Zhao Xu @ 11:37 AM on 07 Jan, 2006
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