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By Anisur Rahman1, Jing Wang1, Jing Guo2, Md. Sayed Hasan1, Yang Liu3, Akira Matsudaira4, Shaikh S. Ahmed5, Supriyo Datta1, Mark Lundstrom1
1. Purdue University 2. University of Florida 3. IBM 4. University of Illinois at Urbana-Champaign 5. Southern Illinois University Carbondale
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
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Version 1.2.2 - published on 16 Oct 2009
doi:10.4231/D3736M20Z cite this
This tool is closed source.
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@ 03:12 PM on 17 Apr, 2008
5.0 out of 5 stars
I`m an undergraduate student…
I liked this tool ,this is very much useful to me..
thanks a lot…………..
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@ 10:49 AM on 14 Jun, 2007
@ 05:44 PM on 12 Oct, 2006
4.0 out of 5 stars
Seems to me that Source/Drain/Gate control parameters (alpha) have incorrect default values for the cntfet module of this tool.
Since these parameters are the ratio of source/drain/gate capacitance to the total capacitance, their sum must be 1: now their sum is 0.88+0.035+0.035=0.95
The interactive.m file must be modified.
@ 04:48 AM on 27 Sep, 2006
@ 06:58 PM on 03 May, 2006
Good way to look at different devices.
@ 11:08 AM on 21 Feb, 2006
As an undergraduate student new to the field of nanotechnology I have found the entire Web site full of valuable information and the simulation tools easy to use. Thanks for providing this resource.
@ 11:37 AM on 07 Jan, 2006
nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies.