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By Anisur Rahman1, Jing Wang1, Jing Guo2, Md. Sayed Hasan1, Yang Liu3, Akira Matsudaira4, Shaikh S. Ahmed5, Supriyo Datta1, Mark Lundstrom1

1. Purdue University 2. University of Florida 3. IBM 4. University of Illinois at Urbana-Champaign 5. Southern Illinois University Carbondale

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

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Version 1.3s - published on 27 Mar 2015

doi:10.4231/D38S4JQ3J cite this

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Version Released DOI Handle Published
1.3s 27 Mar 2015 doi:10.4231/D38S4JQ3J yes
1.3 26 Feb 2014 doi:10.4231/D3RV0D12Z no
1.2.2 16 Oct 2009 doi:10.4231/D3736M20Z no
1.2.1 28 Oct 2008 doi:10.4231/D3B853H58 no
1.2 09 Jan 2008 doi:10.4231/D3J38KH0X no
1.1 07 Jan 2008 doi:10.4231/D3NV9994R no
1.0 03 Jun 2004 doi:10.4231/D3SN0138F no, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.