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FETToy

By Anisur Rahman1, Jing Wang1, Jing Guo2, Md. Sayed Hasan1, Yang Liu3, Akira Matsudaira4, Shaikh S. Ahmed5, Supriyo Datta1, Mark Lundstrom1

1. Purdue University 2. University of Florida 3. IBM 4. University of Illinois at Urbana-Champaign 5. Southern Illinois University Carbondale

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

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Version 1.3 - published on 26 Feb 2014

doi:10.4231/D3RV0D12Z cite this

Open source: license | download

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Versions

Version Released DOI Handle Published
1.3 26 Feb 2014 doi:10.4231/D3RV0D12Z yes
1.2.2 16 Oct 2009 doi:10.4231/D3736M20Z no
1.2.1 28 Oct 2008 doi:10.4231/D3B853H58 no
1.2 09 Jan 2008 doi:10.4231/D3J38KH0X no
1.1 07 Jan 2008 doi:10.4231/D3NV9994R no
1.0 03 Jun 2004 doi:10.4231/D3SN0138F no

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