Support Options

Submit a Support Ticket



By Anisur Rahman1, Mark Lundstrom1, Jing Guo2, Akira Matsudaira3, Yang Liu4, Shaikh S. Ahmed5, Supriyo Datta1, khyale santos nascimento1

1. Purdue University 2. University of Florida 3. University of Illinois at Urbana-Champaign 4. IBM 5. Southern Illinois University Carbondale

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

Launch Tool

This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 1.1
Published on 07 Jan 2008, unpublished on 09 Jan 2008
Latest version: 1.3. All versions

doi:10.4231/D3NV9994R cite this

This tool is closed source.



Published on


FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs,
FETToy assumes either a single or double gate geometry and for a nanowire and nanotube MOSFETs it assumes a cylindrical geometry. Only the lowest subband is considered, but it is readily modifiable to include multiple subbands.
Additional related documents are:

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.