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By Anisur Rahman1, Mark Lundstrom1, Jing Guo2, Akira Matsudaira3, Yang Liu4, Shaikh S. Ahmed5, Supriyo Datta1, khyale santos nascimento1

1. Purdue University 2. University of Florida 3. University of Illinois at Urbana-Champaign 4. IBM 5. Southern Illinois University Carbondale

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

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Archive Version 1.1
Published on 07 Jan 2008, unpublished on 09 Jan 2008
Latest version: 1.3. All versions

doi:10.4231/D3NV9994R cite this

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FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs,
FETToy assumes either a single or double gate geometry and for a nanowire and nanotube MOSFETs it assumes a cylindrical geometry. Only the lowest subband is considered, but it is readily modifiable to include multiple subbands.
Additional related documents are:

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.