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This section is unavailable in an archive version of a tool. Consult the latest published version 1.2.2 for most current information.

FETToy

By Anisur Rahman1, Mark Lundstrom1, Jing Guo2, Akira Matsudaira3, Yang Liu4, Shaikh S. Ahmed5, Supriyo Datta1, khyale santos nascimento1

1. Purdue University 2. University of Florida 3. University of Illinois at Urbana-Champaign 4. IBM 5. Southern Illinois University Carbondale

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

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This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 1.1
Published on 07 Jan 2008, unpublished on 09 Jan 2008
Latest version: 1.2.2. All versions

doi:10.4231/D3NV9994R cite this

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