This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.
FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs,
FETToy assumes either a single or double gate geometry and for a nanowire and nanotube MOSFETs it assumes a cylindrical geometry. Only the lowest subband is considered, but it is readily modifiable to include multiple subbands.
Additional related documents are:
- FETToy Detailed Description
- Theory of Ballistic Nanotransistors
- Learning Module on FETToy
- Homework Exercises for FETToy
by Mark Lundstrom and Jing Guo (Springer - 2006) This book provides an introduction to the mathematical theory of ballistic MOSFETs and a brief discussion of the physics of scattering in nanoscale MOSFETs as well as an overview of simulation approaches to treat semiclassical and quantum transport.