FETToy

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

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Archive Version 1.2
Published on 09 Jan 2008, unpublished on 28 Oct 2008 All versions

doi:10.4231/D3J38KH0X cite this

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Abstract

FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs,
FETToy assumes either a single or double gate geometry and for a nanowire and nanotube MOSFETs it assumes a cylindrical geometry. Only the lowest subband is considered, but it is readily modifiable to include multiple subbands.
Additional related documents are:



Credits

The underlying theory is described in detail in A. Rahman, J. Guo, S. Datta, and M.
Lundstrom, "Theory of Ballistic Nanotransistors", IEEE Transactions on
Electron Devices, 50, pp. 1853-1864, 2003
. This theory extends on
work by Natori (J. Appl. Phys., 76, 4879-4890, 1994) by including 2D
electrostatics and the so-called "quantum capacitance".

Cite this work

Researchers should cite this work as follows:

  • A. Rahman, J. Guo, S. Datta, and M. Lundstrom, "Theory of Ballistic Nanotransistors", IEEE Transactions on Electron Devices, 50, pp. 1853-1864, 2003.
  • anisur rahman; Jing Guo; khyale santos nascimento; Yang Liu; Akira Matsudaira; Shaikh S. Ahmed; Supriyo Datta; Mark Lundstrom (2015), "FETToy," http://nanohub.org/resources/fettoy. (DOI: 10.4231/D3J38KH0X).

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