IWCE 2015: International Workshop on Computational Electronics

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Workshops

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Abstract

The International Workshop on Computational Electronics covers all aspects of advanced simulation of electronic transport and optoelectronic processes in semiconductors and semiconductor devices based on both inorganic and organic materials. IWCE 2015 will feature the traditional IWCE topics in electronic transport, thermal transport, spin transport, optoelectronic processes and coupled phenomena. Additionally, we will extend the conference to topics such as first principles calculations in the context of transport studies, and novel architectures for nanodevices. The scientific program, organized in a single-session format, consists of invited lectures, contributed talks, and poster presentations.

The workshop is intended to be an international forum for discussions on the current trends and future directions of computational electronics.  The emphasis of the contributions is on interdisciplinary aspects of Computational Electronics, touching Physics, Engineering, Applied Mathematics, as well as Chemistry and Biology. Active participation of graduate students, including student presentations, is strongly encouraged.

Cite this work

Researchers should cite this work as follows:

  • (2015), "IWCE 2015: International Workshop on Computational Electronics," http://nanohub.org/resources/22933.

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Time

Location

North Ballroom, PMU, Purdue University, West Lafayette, IN

In This Workshop

  1. Short-Wavelength Spin-Wave Generation by a Microstrip Line

    17 Sep 2015 | Online Presentations | Contributor(s): Adam Papp, Wolfgang Porod

    IWCE 2015 presentation.  We investigate the use of microstrip lines for short-wavelength spin-wave generation in magnetic thin films. We use micromagnetic and electromagnetic simulations to estimate the generated wave amplitudes for different geometries and at different frequencies. Our...

  2. Self-Consistent Field and Master Equation Approach to Calculating the Dielectric Function of Graphene

    17 Sep 2015 | Online Presentations | Contributor(s): Farhad Karimi, Irena Knezevic

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

  3. Non-Equilibrium Green's Function (NEGF): A Different Perspective

    18 Sep 2015 | Online Presentations | Contributor(s): Supriyo Datta

    The NEGF method was established in the 1960’s through the classic work of Keldysh and others [1] using the methods of many- body perturbation theory (MBPT) and this approach is widely used in the literature [2]. By contrast I have introduced a different approach starting with the...

  4. Effect of the High-k Dielectric/Semiconductor Interface on Electronic Properties in Ultra-thin Channels

    15 Oct 2015 | Online Presentations | Contributor(s): Daniel A. Valencia-Hoyos, Evan Michael Wilson, mark rodwell, Gerhard Klimeck, Michael Povolotskyi

    IWCE 2015 presentation.  Abstract and more information to be added at a later date. As logic devices continue to downscale, an increasing fraction of the channel atoms are in close contact with oxide atoms of the gate. These surface atoms experience a chemical environment that is distinct...

  5. Design and simulation of GaSb/InAs 2D Transmission enhanced TFET

    10 Oct 2015 | Online Presentations | Contributor(s): Pengyu Long, Evan Michael Wilson, Jun Huang, mark rodwell, Gerhard Klimeck, Michael Povolotskyi

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

  6. Self-Consistent Physical Modeling of SiOx-Based Memristor Structures

    15 Oct 2015 | Online Presentations | Contributor(s): Vihar Georgiev, Toufik Sadi, Asen Asenov

    IWCE 2015 presentation We employ a newly-developed three- dimensional (3D) physical simulator to study Si resistive switching nonvolatile memory (RRAM) structures. We couple a stochastic simulation of ion transport to the ‘atomistic’ simulator GARAND and a self-heating model to...

  7. Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films

    15 Oct 2015 | Online Presentations | Contributor(s): Joydeep Ghosh, Dmitri Osintsev, Viktor Sverdlov, S. Selberherr

    IWCE 2015 presentation.  the electron spin properties are promising for future spin-driven devices. in contrast to charge, spin is not a conserved quantity, and having sufficiently long spin lifetime is critical for applications. silicon, the major material of microelectronics, also appears...

  8. Density Functional Tight Binding (DFTB) Modeling in the Context of Ultra-Thin Silicon-on-Insulator MOSFETs

    10 Oct 2015 | Online Presentations | Contributor(s): Stanislav Markov

    IWCE 2015 presentation. We investigate the applicability of density functional tight binding (DFTB) theory [1][2], coupled to non-equilibrium Green functions (NEGF), for atomistic simulations of ultra-scaled electron devices, using the DFTB+ code [3][4]. In the context of ultra-thin...

  9. Multiscale Modeling of Graphene-Metal Contacts

    01 Feb 2016 | Online Presentations | Contributor(s): T. Cusati, Gianluca Fiori, A. Fortunelli, Giuseppe Iannaccone

    IWCE 2015 presentation. The quality of contacts between metals and two- dimensional materials is a critical aspect for the performance of transistors based on two-dimensional materials. In this talk we focus on an approach to multiscale modeling of graphene- metal contacts, considering both...

  10. NEMO5: Why must we treat topological insulator nanowires atomically?

    15 Oct 2015 | Online Presentations | Contributor(s): Fan Chen, Michael J. Manfra, Gerhard Klimeck, Tillmann Christoph Kubis

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

  11. Dissipative Quantum Transport Using One-Particle Time-Dependent (Conditional) Wave Functions

    19 Oct 2015 | Online Presentations | Contributor(s): Xavier Oriols

    IWCE 2015 presentation. an effective single-particle schrodinger equation to include dissipation into quantum devices is presented. this effective equation is fully understood in the context of bohmian mechanics, a theory of particles and waves, where it is possible to define unambiguously...

  12. Computational Methods for the Design of Bioinspired Systems that Employ Nanodevices

    05 Nov 2015 | Online Presentations | Contributor(s): Damien Querlioz, Adrien F. Vincent

    IWCE 2015 session keynote presentation. Biological systems compute by exploiting the rich physics of their natural “nanodevices”. In electronics, it is therefore attractive to design bioinspired computing paradigms, which exploit device physics more deeply than digital logic, in order...

  13. Diffusion-Reaction Modeling of Cu Migration in CdTe Solar Devices

    22 Apr 2016 | Online Presentations | Contributor(s): Da GUO, Tian Fang, Richard Akis, Dragica Vasileska

    IWCE 2015 presentation. In this work, we report on development of one-dimensional (1D) finite-difference and two- dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu- related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe...

  14. Analyzing Variability in Short-Channel Quantum Transport from Atomistic First Principles

    05 Nov 2015 | Online Presentations | Contributor(s): Qing Shi

    IWCE 2015 invited presentation.  Due to random impurity fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this talk I shall present a theoretical formalism and its numerical realization to predict quantum-transport variability from...

  15. From Single-Stage to Device-Level Simulation of Coupled Electron and Phonon Transport in Quantum Cascade Lasers

    02 Nov 2015 | Online Presentations | Contributor(s): Irena Knezevic

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

  16. Multi-Scale Modeling of Metal-CNT Interfaces

    03 Nov 2015 | Online Presentations | Contributor(s): Martin Claus

    IWCE 2015 presentation.  the authors studied the impact of contact materials on cntfet behavior using multiscale modeling and simulation framework. a strong correlation between metal-cnt coupling strength, contact length and contact resistance was found. the atomistic simulation was used to...

  17. A Multi-Scale Modeling Approach to Study Transport in Silicon Heterojunction Solar Cells

    03 Nov 2015 | Online Presentations | Contributor(s): Pradyumna Muralidharan, Dragica Vasileska, Stephen M. Goodnick, Stuart Bowden

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

  18. Unified View of Electron and Phonon Transport

    10 Nov 2015 | Online Presentations | Contributor(s): Mark Lundstrom, Jesse Maassen

    A simple, unified view of electron and phonon transport is presented. Similarities and differences are identified, and new insights that come from addressing phonon transport from an electron transport perspective will be discussed.

  19. Simulation of Organic Solar Cell with Graphene Transparent Electrode

    13 Nov 2015 | Online Presentations | Contributor(s): Paolo Paletti, giacomo ulisse, Giuseppe Iannaccone, Gianluca Fiori

    IWCE 2015 presentation. We present a simulation study of the performance of organic solar cell (OSC) exploiting graphene as transparent electrode. The approach is based on a multi-scale/multi-physics simulation framework, which is able to provide relevant information regarding the design...

  20. Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs

    13 Nov 2015 | Online Presentations | Contributor(s): Aryan Afzalian, Jun Huang, Hesameddin Ilatikhameneh, Santiago Alonso Perez Rubiano, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck

    IWCE 2015 presentation.  we explore here the suitability of a mode space tight binding algorithm to various iii-v homo- and heterojunction nanowire devices. we show that in iii-v materials, the number of unphysical modes to eliminate is very high compared to the si case previously reported...

  21. Time-Resolved Computational Method for Atomistic Open System Simulations

    13 Nov 2015 | Online Presentations | Contributor(s): Bozidar Novakovic, Gerhard Klimeck

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

  22. Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence

    25 Nov 2015 | Online Presentations | Contributor(s): Marc Bescond, Nicolas Cavassilas, Salim Berrada

    IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...

  23. GaN/InGaN/GaN Disk-in-Wire Light Emitters: Polar vs. Nonpolar Orientations

    25 Nov 2015 | Online Presentations | Contributor(s): Rezaul Karim Nishat, S. Alqahtani, Ye Wu, Vinay Uday Chimalgi, Shaikh S. Ahmed

    IWCE 2015 presentation. in this paper, we computationally evaluate and compare the performance of recently reported in0.75n/gan disk-in-wire light emitting diodes (led) grown in the polar (c-plane) and nonpolar (m-plane) crystallographic orientations in terms of built-in fields, electronic...

  24. Thermal Conductivity of III-V Semiconductor Superlattices

    25 Jan 2016 | Online Presentations | Contributor(s): Song Mei, Zlatan Aksamija, Irena Knezevic

    IWCE 2015 presentation.  An InGaAs/InAlAs superlattice (SL) on an InP substrate is the mainstream material system for mid- IR quantum cascade lasers (QCL). The thermal conductivity tensor of SLs is critical for energy-efficient performance of QCLs; understanding the relative importance of...

  25. Study of the Interface Roughness Models using 3D Finite Element Schrödinger Equation Corrected Monte Carlo Simulator on Nanoscaled FinFET

    25 Jan 2016 | Online Presentations | Contributor(s): Daniel Nagy, Muhammad Ali A. Elmessary, Manuel Aldegunde, Karol Kalna

    IWCE 2015 presentation.  Interface roughness scattering (IRS) is one of the key limiting scattering mechanism for both planar and non-planar CMOS devices. To predict the performance of future scaled devices and new structures the quantum mechanical confinement based IRS models are essential....

  26. Screening Effect on Electric Field Produced by Spontaneous Polarization in ZnO Quantum Dot in Electrolyte

    05 Jan 2016 | Online Presentations | Contributor(s): Xinia Meshik, Min S. Choi, Mitra Dutta, Michael Stroscio

    IWCE 2015 presentation. in this paper, the calculation of the strength of the electrostatic field produced by zno quantum dots due to the spontaneous polarization in a physiological electrolyte and its application on retinal horizontal cells are presented.

  27. Thermionic Escape in Quantum Well Solar Cell

    18 Dec 2015 | Online Presentations | Contributor(s): Nicolas Cavassilas, Fabienne Michelini, Marc Bescond

    This theoretical work analyzes the photogeneration and the escape of carrier in InGaN/GaN core-shell nanowires. Our electronic transport model considers quantum behaviors such as confinement, tunneling, electron-phonon scattering and electron-photon interactions. The large lattice mismatch...

  28. Anisotropic Schrödinger Equation Quantum Corrections for 3D Monte Carlo Simulations of Nanoscale Multigate Transistors

    05 Jan 2016 | Online Presentations | Contributor(s): Karol Kalna, Muhammad Ali A. Elmessary, Daniel Nagy, Manuel Aldegunde

    IWCE 2015 presentation. We incorporated anisotropic 2D Schrodinger equation based quantum corrections (SEQC) that depends on valley orientation into a 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox. The MC toolbox was tested against experimental ID-VG characteristics of the 22 nm gate...

  29. Calculation of phonon transmission in Si/PtSi heterostructures

    25 Jan 2016 | Online Presentations | Contributor(s): Jung Hyun Oh, Mincheol Shin

    In this work we examine the suppression of phonon transport in another example, Si and SiPt heterostructures (3D). This heterostrucure is believed to have the benefit that the electrical conductance can be kept high while the phonon propagation is suppressed due to the large acoustic impedance...

  30. Variational Formulation of Stable Discrete k · p Models

    25 Jan 2016 | Online Presentations | Contributor(s): William R Frensley

    IWCE 2015 presentation. the longstanding problem of spurious states in k·: ; p models of semiconductor nanostructures has been shown to be an artifact of the use of the centereddifference approximation to the gradient, and it has been shown that stable models may be constructed on the...

  31. IWCE 2015: Openning Remarks

    10 Feb 2016 | Online Presentations | Contributor(s): Gerhard Klimeck

    IWCE 2015 presentation.  Welcome and opening remarks for the 18th International Workshop on Computational Electronics.

  32. Progress on Quantum Transport Simulation Using Empirical Pseudopotentials

    10 Feb 2016 | Online Presentations | Contributor(s): Jingtian Fang, William Gerard Hubert Vandenberghe, Massimo V Fischetti

    IWCE 2015 presentation. After performing one-dimensional simulation of electron transport in narrow quantum wires without gate control in (Fang et al., 2014) and (Fu and Fischetti, 2013) using the open boundary-conditions full-band plane-wave transport formalism derived in (Fu, 2013), we now...

  33. Wigner Function Approach to Quantum Transport in QCLs

    10 Feb 2016 | Online Presentations | Contributor(s): Olafur Jonasson, Irena Knezevic

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

  34. Memory-Efficient Particle Annihilation Algorithm for Wigner Monte Carlo Simulations

    10 Feb 2016 | Online Presentations | Contributor(s): Paul Ellinghaus

    IWCE 2015 presentation. The Wigner Monte Carlo solver, using the signed-particle method, is based on the generation and annihilation of numerical particles. The memory demands of the annihilation algorithm can become exorbitant, if a high spatial resolution is used, because the entire discretized...

  35. Ultra-Thin Silicon Membranes and Nanowires as Nanophononic and Thermoelectric Devices

    10 Feb 2016 | Online Presentations | Contributor(s): Davide Donadio

    IWCE 2015 presentation. Engineering silicon at the nanoscale paves the way to new applications of this cheap, abundant, and technologically and environmentally friendly material. Transistors in nanoelectronics have reached the 10 nm size limit, implying very high density but also critical issues...

  36. Modeling Quantum Acceleration (Multi-Band Drift) of Bloch Waves in Nanowires

    24 Mar 2016 | Online Presentations | Contributor(s): Raghuraj Hathwar, marco saraniti, Stephen M. Goodnick

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

  37. Contact Resistances in Trigate & FinFET Devices

    22 Mar 2016 | Online Presentations | Contributor(s): Yann-Michel Niquet

    IWCE 2015 presentation.

  38. Validating Simple Approaches for Quantum Cascade Laser Modeling

    21 Apr 2016 | Online Presentations | Contributor(s): Martin Franckie, David O. Winge, Andreas Wacker

    IWCE 2015 presentation. Abstract and more information to be added at a later date.

  39. Multi-Scale Modeling of Self-Heating Effects in Nano-Devices

    21 Apr 2016 | Online Presentations | Contributor(s): Suleman Sami Qazi, Akash Anil Laturia, Robin Louis Daugherty, Katerina Raleva, Dragica Vasileska

    IWCE 2015 presentation. This paper discusses a multi-scale device modeling scheme for analyzing self-heating effects in nanoscale silicon devices. A 2D/3D particle-based device simulator is self-consistently coupled to an energy balance solver for the acoustic and optical phonon bath. This...

  40. Modeling of Quantum Cascade Laser Sources with Giant Optical Nonlinearities

    07 Apr 2016 | Online Presentations | Contributor(s): Christian Jirauschek

    IWCE 2015 Presentation. A characteristic feature of the quantum cascade laser (QCL) is that the optical properties of the active region can be custom-tailored by quantum engineering. Recently, the possibility to integrate giant artificial optical nonlinearities has enabled various novel...

  41. Electronic and Vibrational Properties of 2D Materials from Monolayer to Bulk: Opportunity Unlimited

    21 Apr 2016 | Online Presentations | Contributor(s): Mahesh R Neupane

    IWCE 2015 invited presentation. The placement of two dimensional (2D) materials such as hexagonal boron nitride (h-BN) and transition metal dichalcogenide (TMDC) at the forefront of materials and device research was pioneered by the discovery of graphene, an atomically thin 2D allotrope of...

  42. 15-Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel Field-Effect Transistors

    01 Nov 2016 | Online Presentations | Contributor(s): Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral

    IWCE 2015 presentation.

  43. The Role of Dimensionality on Phonon-Limited Charge Transport: from CNTs to Graphene

    27 Oct 2016 | Online Presentations | Contributor(s): Jing Li, Yann-Michel Niquet

    IWCE 2015 presentation.

  44. Low Temperature Enhancement of the Thermoelectric Seebeck Coefficient in Semiconductor Nanoribbons

    09 Nov 2016 | Online Presentations | Contributor(s): Kommini Adithya, Zlatan Aksamija

    IWCE 2015 Presentation. We propose a novel approach to achieving a narrow window-shaped TDF through a combination of a step-like 2-dimensional density-of-states (DOS) and inelastic optical phonon scattering. A shift in the onset of scattering with respect to the step-like DOS creates a TDF which...

  45. Finite Difference Schemes for k.p Models: A Comparative Study

    01 Nov 2016 | Online Presentations | Contributor(s): Jun Huang, Kuang-Chung Wang, William R Frensley, Gerhard Klimeck

    IWCE 2015 Presentation.

  46. Transferable Tight Binding Model for Strained Heterostructures

    22 Oct 2016 | Online Presentations | Contributor(s): Yaohua Tan, Michael Povolotskyi, Tillmann Christoph Kubis, Timothy Boykin, Gerhard Klimeck

    IWCE 2015 presentation.

  47. Modeling of Inter-ribbon Tunneling in Graphene

    11 Nov 2016 | Online Presentations | Contributor(s): Maarten Van de Put, William Gerard Hubert Vandenberghe, Massimo V Fischetti

    IWCE presentation. In this paper we investigate the finite-size effect in nano-scaled graphene flakes. Improving on the bulk description, and because the structures are – atomistically speaking – large in size, we use the empirical pseudopotential method[2].