TE/TM polarisation response of InAs/GaAs quantum dot bilayers

By Muhammad Usman

University of Melbourne

Published on

Abstract

Quantum dot bilayers are strong candidates for the design of telecom devices working at 1300 nm wavelength range. Here we analyse - both experimentally and theoretically - their optical and polarisation properties.  

References

Muhammad Usman, Susannah Heck, Edmund Clarke, Peter Spencer, Hoon Ryu, Ray Murray, Gerhard Klimeck, Experimental and theoretical study of polarisation-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm), J. of Applied Physics 109, 104510 (2011)

Cite this work

Researchers should cite this work as follows:

  • Muhammad Usman (2015), "TE/TM polarisation response of InAs/GaAs quantum dot bilayers," http://nanohub.org/resources/22973.

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