Diffusion-Reaction Modeling of Cu Migration in CdTe Solar Devices

By Da GUO1, Tian Fang2, Richard Akis1, Dragica Vasileska1

1. Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 2. First Solar, Inc., Perrysburg, OH

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Abstract

IWCE 2015 presentation. In this work, we report on development of one-dimensional (1D) finite-difference and two- dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu- related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe solar cells performance has been studied as a function of stress time in re- sponse to the evolution of associated acceptor and donor states. To achieve such capability, the simu- lators solve reaction-diffusion equations for the defect states in time-space domain self- consistently with the free carrier transport. Re- sults of 1-D and 2-D simulations have been com- pared to verify the accuracy of solutions.

Credits

D. Brinkman, C. Ringhofer (Mathematics, Arizona State University, Tempe, AZ), and T. Fang, I. Sankin (First Solar, Perrysburg, OH). This work was supported by the Department of Energy under award number DE-EE0006344.

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References

  1. K. D. Dobson, I. Visoly-Fisher, G. Hodes, and D. Cahen, "Stability of CdTe/CdS thin-film solar cells," Solar Energy Materials and Solar Cells, vol. 62 (2000).

Cite this work

Researchers should cite this work as follows:

  • D. Guo, "Diffusion-reaction modeling of Cu migration in CdTe solar device," in Computational Electronics (IWCE) 2015 International Workshop on, DOI: 10.1109/IWCE.2015.7301962

  • Da GUO, Tian Fang, Richard Akis, Dragica Vasileska (2016), "Diffusion-Reaction Modeling of Cu Migration in CdTe Solar Devices," http://nanohub.org/resources/22989.

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North Ballroom, PMU, Purdue University, West Lafayette, IN

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