Negative Capacitance Ferroelectric Transistors: A Promising Steep Slope Device Candidate?

By Suman Datta

Electrical Engineering, University of Notre Dame, Notre Dame, IN

Published on

Abstract

Negative capacitance field effect transistors are another option for realizing steep switching transistors. Negative capacitance causes the differential potential drop in the semiconductor and the insulator to have opposite polarity, enabling MOS current to increase at a rate higher than 60 mV per decade. Recently, we have observed hysteretic switching with sub-kT/q steep slope (13 mV/decade at room temperature) in experimental devices by employing PbZr0.52Ti0.48O3 (PZT) as a ferroelectric gate insulator, which was directly integrated on a silicon channel with a non-perovskite high-k dielectric (HfO2) as a buffer interlayer. The sub-kT/q switching due to ferroelectric negative capacitance is observed not at low currents, but in strong inversion and provides an important point of consistency with predictions of Landau-Devonshire theory and Landau Khalatnikov equation. In this talk, we will review progress in non-perovskite ALD based ferroelectric dielectrics which have strong implication for VLSI compatible negative capacitance Ferroelectric FETs.

Bio

Suman Datta Suman Datta recently joined the University of Notre Dame as the Chang Family Chair Professor of Engineering Innovation. He was previously a faculty member at Penn State University in Electrical Engineering. He joined Penn State as the inaugural Monkowski Associate Professor in 2007, and was promoted to Full Professor in 2011. Before joining Penn State, from 1999 till 2007, he was in the Advanced Transistor Group at Intel Corporation, where he developed several generations of logic transistor technologies including high-k/metal gate, Tri-gate and alternate channel CMOS transistor technologies. His research interests are in novel solid-state nanoelectronic materials and devices, understanding of transport mechanisms, and ultralow-power circuit applications, with recent emphasis on non-volatile computing powered by energy harvesters and computing using collective state of coupled systems. He was a recipient of the Intel Achievement Award (2003), the Intel Logic Technology Quality Award (2002), the Penn State Engineering Alumni Association (PSEAS) Outstanding Research Award (2012), the SEMI Award for North America (2012), IEEE Device Research Conference Best Paper Award (2010, 2011) and the PSEAS Premier Research Award (2015). He is a Fellow of IEEE.

Sponsored by

Cite this work

Researchers should cite this work as follows:

  • Suman Datta (2015), "Negative Capacitance Ferroelectric Transistors: A Promising Steep Slope Device Candidate?," http://nanohub.org/resources/23011.

    BibTex | EndNote

Time

Location

1001 Wang, Purdue University, West Lafayette, IN

Tags

Negative Capacitance Ferroelectric Transistors: A Promising Steep Slope Device Candidate?
  • Negative Capacitance Ferroelectric Transistors: A Promising Steep Slope Device Candidate? 1. Negative Capacitance Ferroelec… 0
    00:00/00:00
  • Motivation 2. Motivation 174.97497497497497
    00:00/00:00
  • Energy Band Diagram 3. Energy Band Diagram 281.44811478144811
    00:00/00:00
  • Ferroelectric Energy Landscape 4. Ferroelectric Energy Landscape 388.48848848848849
    00:00/00:00
  • Ferroelectric Field-Polarization landscape 5. Ferroelectric Field-Polarizati… 506.07273940607274
    00:00/00:00
  • Negative capacitance 6. Negative capacitance 536.06940273606938
    00:00/00:00
  • 2 Terminal Ferroelectric Si MOSCAPs Enhanced Capacitance 7. 2 Terminal Ferroelectric Si MO… 572.3056389723057
    00:00/00:00
  • Demonstration of Negative Capacitance : Total Capacitance Enhancement 8. Demonstration of Negative Capa… 626.99366032699368
    00:00/00:00
  • Two terminal FE MOSCAP 9. Two terminal FE MOSCAP 916.4164164164165
    00:00/00:00
  • XRD: PbZr0.52Ti0.48O3 / HfO2/ Si MOSCAPs 10. XRD: PbZr0.52Ti0.48O3 / HfO2/ … 1103.6369703036371
    00:00/00:00
  • P-E Measurement 11. P-E Measurement 1162.9295962629296
    00:00/00:00
  • PbZr0.52Ti0.48O3 / HfO2/ Si MOSCAPs 12. PbZr0.52Ti0.48O3 / HfO2/ Si MO… 1227.0270270270271
    00:00/00:00
  • Negative Capacitance : Total Capacitance Enhancement 13. Negative Capacitance : Total C… 1498.8321654988322
    00:00/00:00
  • 3 Terminal Ferroelectric Si MOSFETs Expected I-V Measured I-V 14. 3 Terminal Ferroelectric Si MO… 1550.6506506506507
    00:00/00:00
  • Expected FerroFET Id-Vg Characteristics from baseline FET + FE characteristics 15. Expected FerroFET Id-Vg Charac… 1561.2278945612279
    00:00/00:00
  • Baseline HfO2 Si MOSFETs 16. Baseline HfO2 Si MOSFETs 1626.0927594260929
    00:00/00:00
  • (QMOS, VMOS) and (QFE, VFE) 17. (QMOS, VMOS) and (QFE, VFE) 1734.3343343343345
    00:00/00:00
  • Voltage Amplification 18. Voltage Amplification 1762.595929262596
    00:00/00:00
  • Effect of FE thickness: CFET < -CFE Non-hysteretic Regime 19. Effect of FE thickness: CFET <… 1833.7671004337672
    00:00/00:00
  • Evolution of CMOS/CFE-Q curve (Non - Hysteretic Regime) 20. Evolution of CMOS/CFE-Q curve … 1935.1351351351352
    00:00/00:00
  • When CFET > -CFE – Hysteretic Regime 21. When CFET > -CFE – Hystereti… 2000.1334668001337
    00:00/00:00
  • Evolution of CMOS/CFE-Q curve (Hysteretic Regime) 22. Evolution of CMOS/CFE-Q curve … 2080.0133466800135
    00:00/00:00
  • Ferroelectric Si FET process flow 23. Ferroelectric Si FET process f… 2098.998998998999
    00:00/00:00
  • PZT/HfO2 Interface TEM (post processing) 24. PZT/HfO2 Interface TEM (post p… 2131.1644978311647
    00:00/00:00
  • FE FET Characteristics – Steep Slope in both turn-on and turn-off, at high and low Vds 25. FE FET Characteristics – Ste… 2254.2542542542542
    00:00/00:00
  • Experiment versus Theory 26. Experiment versus Theory 2360.06006006006
    00:00/00:00
  • Low Voltage, Non-Hysteretic, Ferroelectric Steep Slope FETs ? 27. Low Voltage, Non-Hysteretic, F… 2670.5705705705705
    00:00/00:00
  • 22nm FinFETs 28. 22nm FinFETs 2691.0243576910243
    00:00/00:00
  • Capacitance Matching: CMOS/CFE-Q 29. Capacitance Matching: CMOS/CFE… 2719.6529863196529
    00:00/00:00
  • 0.5 V FerroFET Operation 30. 0.5 V FerroFET Operation 2745.578912245579
    00:00/00:00
  • Scaled Ferroelectrics 31. Scaled Ferroelectrics 2843.20987654321
    00:00/00:00
  • NCFETs 32. NCFETs 2888.254921588255
    00:00/00:00
  • Compact Model 33. Compact Model 2977.0437103770437
    00:00/00:00
  • Compact Model 34. Compact Model 3002.2355689022356
    00:00/00:00
  • FE Thickness and CMOS Technology 35. FE Thickness and CMOS Technolo… 3072.2055388722056
    00:00/00:00
  • ALD Ferroelectric Thin Films 36. ALD Ferroelectric Thin Films 3132.1988655321989
    00:00/00:00
  • HfO2-based Ferroelectrics 37. HfO2-based Ferroelectrics 3158.0246913580249
    00:00/00:00
  • Hf0.5Zr0.5O2 Ferroelectric 38. Hf0.5Zr0.5O2 Ferroelectric 3256.8902235568903
    00:00/00:00
  • Energy Delay 39. Energy Delay 3338.5385385385389
    00:00/00:00
  • Take Home Message 40. Take Home Message 3446.3463463463463
    00:00/00:00