This tool estimates the electron or hole mobility in an amorphous semiconductor, only the effective mass and the band tail density of states (N_TA,D, W_TA,D) need to be specified. The physics-based model involves band tail state trapping of a diffusive (Brownian motion) mobility and accounts for both drift- and diffusion-induced transport, as normally encountered in the operation of a thin-film transistor. The mobility is given in dependence of Fermi level position or gate voltage and two key disorder parameters (total band tail trap density and disorder potential standard deviation) are calculated.

References:

K.A. Stewart, B.-S. Yeh, and J.F. Wager, Amorphous semiconductor mobility limits, J. Non-Cryst. Solids (2015), http://dx.doi.org/10.1016/j.jnoncrysol.2015.10.005

Researchers should cite this work as follows:

• Kevin Stewart (2016), "Amorphous Semiconductor Transport Simulator," https://nanohub.org/resources/asts. (DOI: 10.4231/D3PR7MV83).

  BibTex | EndNote

1. Amorphous Materials
2. nanoelectronics
3. TFT