MATLAB model that calculates the Q-V, C-V, and I-V characteristics of the conventional MOSFET and NC-FET.
Gate-source and gate-drain overlap and fringing capacitances and flat-band potential are considered in the model. Corresponding input parameters: r_C=C_ov/C_ox and flat-band potential (V<sub>fb</sub>). Coefficients of different ferroelectric dielectrics are provided. There is a provision to include multi-layers gate NC dielectric stack.
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