MATLAB: Negative Capacitance (NC) FET Model

By Muhammad Abdul Wahab1, Muhammad A. Alam1

1. Purdue University

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Abstract

MATLAB model that calculates the Q-V, C-V, and I-V characteristics of the conventional MOSFET and NC-FET.

Gate-source and gate-drain overlap and fringing capacitances and flat-band potential are considered in the model. Corresponding input parameters: r_C=C_ov/C_ox and flat-band potential (V<sub>fb</sub>). Coefficients of different ferroelectric dielectrics are provided. There is a provision to include multi-layers gate NC dielectric stack.

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Researchers should cite this work as follows:

  • Muhammad Abdul Wahab; Muhammad A. Alam (2015), "MATLAB: Negative Capacitance (NC) FET Model," http://nanohub.org/resources/23185.

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