This theoretical work analyzes the photogeneration and the escape of carrier in InGaN/GaN core-shell nanowires. Our electronic transport model considers quantum behaviors such as confinement, tunneling, electron-phonon scattering and electron-photon interactions. The large lattice mismatch between InN and GaN requires the use of multiple quantum well design, in which either In content or well thickness is limited. Since thick GaN barriers are required in these stressed devices, we show that tunneling has a negligible impact on carrier escape, which is mostly achieved by the phonon scattering. Our conclusions demonstrate that a thick quantum well with a low In content, in which the confinement is moderate, is more efficient.
In collaboration with Clémentine Gelly.
Cite this work
Researchers should cite this work as follows:
Cavassilas, N., "Thermionic escape in quantum well solar cell," in Computational Electronics (IWCE) 2015 International Workshop on, DOI: 10.1109/IWCE.2015.7301941
North Ballroom, PMU, Purdue University, West Lafayette, IN