A UCSD analytic TFET model

By Jianzhi Wu1, Yuan Taur1

1. University of California, San Diego

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Abstract

A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a gate-controlled channel potential that satisfies the source and drain boundary conditions. Verified by numerical simulations, the model is able to generateIds-Vgs characteristics for any given staggered bandgap and channel length. Ids-Vds characteristics are also generated by building into the model the de-biasing effect of channel charge in the linear region. It is predictive in the sense that there are no ad hoc fitting parameters.

References

[1] Yuan Taur, Jianzhi Wu and Jie Min, “An analytic model for heterojunction tunnel FETs with exponential barrier” IEEE Transactions on Electron Devices, vol. 62, no. 5, pp. 1399-1404, May 2015. 

[2] Jianzhi Wu, Jie Min, and Yuan Taur, “Short channel effects in tunnel FETs”, IEEE Transactions on Electron Devices, vol. 62, no. 9, pp. 3019-3024, Sept. 2015. 

[3] Jianzhi Wu, Jie Min, Jingwei Ji and Yuan Taur, “An analytic model for heterojunction and homojunction tunnel FETs with 3D density of states”, in Proc. of 73rd Device Research Conference (DRC) (pp. 249-250), Ohio, USA, June, 2015.

[4] Jie Min, Jianzhi Wu and Yuan Taur, “Analysis of source doping effect in tunnel FETs with staggered bandgap”, IEEE Electron Device Letters, vol. 36, no. 10, pp. 1094-1096, Oct. 2015.  

Publications

[1] Yuan Taur, Jianzhi Wu and Jie Min, “An analytic model for heterojunction tunnel FETs with exponential barrier” IEEE Transactions on Electron Devices, vol. 62, no. 5, pp. 1399-1404, May 2015. 

[2] Jianzhi Wu, Jie Min, and Yuan Taur, “Short channel effects in tunnel FETs”, IEEE Transactions on Electron Devices, vol. 62, no. 9, pp. 3019-3024, Sept. 2015. 

[3] Jianzhi Wu, Jie Min, Jingwei Ji and Yuan Taur, “An analytic model for heterojunction and homojunction tunnel FETs with 3D density of states”, in Proc. of 73rd Device Research Conference (DRC) (pp. 249-250), Ohio, USA, June, 2015.

[4] Jie Min, Jianzhi Wu and Yuan Taur, “Analysis of source doping effect in tunnel FETs with staggered bandgap”, IEEE Electron Device Letters, vol. 36, no. 10, pp. 1094-1096, Oct. 2015.  

Cite this work

Researchers should cite this work as follows:

  • Jianzhi Wu, Yuan Taur (2015), "A UCSD analytic TFET model," http://nanohub.org/resources/23350.

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