Multi-Scale Modeling of Self-Heating Effects in Nano-Devices

By Suleman Sami Qazi, Akash Anil Laturia, Robin Louis Daugherty, Katerina Raleva, Dragica Vasileska

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Abstract

IWCE 2015 presentation. This paper discusses a multi-scale device modeling scheme for analyzing self-heating effects in nanoscale silicon devices. A 2D/3D particle-based device simulator is self-consistently coupled to an energy balance solver for the acoustic and optical phonon bath. This simulator is used to analyze the hot-spot temperature and location in various SOI devices, dual gate structures and nanowire transistors. This device simulator has been coupled to a SILVACO simulation tool which solves for heat transport in interconnects at the circuit level. The proposed multi- scale simulation scheme allows for analysis of thermal effects in an integrated circuit. Simulation results obtained with this simulator are in agreement with experimental measurements from IMEC using specialized heater-sensor test structures in common-source and common-drain configurations.

Credits

In collaboration with A. Shaik, X. Guo (Arizona State University), E. Bury (IMEC) and B. Kaczer (Ss. Cyril and Methodius University, Skopje, Macedonia)

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Cite this work

Researchers should cite this work as follows:

  • Suleman Sami Qazi; Akash Anil Laturia; Robin Louis Daugherty; Katerina Raleva; Dragica Vasileska, "Multi-Scale Modeling of Self-Heating Effects in Nano-Devices," in Computational Electronics (IWCE) 2015 International Workshop on, DOI: Not available in IEEE Xplore digital library. Full Website Here

  • Suleman Sami Qazi; Akash Anil Laturia; Robin Louis Daugherty; Katerina Raleva; Dragica Vasileska (2016), "Multi-Scale Modeling of Self-Heating Effects in Nano-Devices," http://nanohub.org/resources/23888.

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Location

North Ballroom, PMU, Purdue University, West Lafayette, IN

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