BTI Simulator for Two Well Thermionic Model

By Rakesh P Rao1, Narendra Parihar1, Sujay Desai2, Souvik Mahapatra1

1. Indian Institute of Technology Bombay, India 2. IIT Bombay / UC Berkeley

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This simulator calculates the kinetics associated with hole trapping in pre-existing gate insulator traps during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the "Two Well Thermionic Model". The simulator can calculate threshold voltage shift due to hole trapping and detrapping during and after DC stress and during AC stress.

The zip file contains setup instructions (setup guide) and model specific instructions (readme), besides the C based code (executable), input deck and example files and plots. You are advised to read the setup and readme files before installation and running the simulator.

You have to install Gnuplot 5.0.4 and Notepad++, refer to setup guide for more details. 



  1. S. Desai, S. Mukhopadhyay, N. Goel, N. Nanaware, B. Jose, K. Joshi and S. Mahapatra., "A comprehensive AC / DC NBTI model: Stress, recovery, frequency, duty cycle and process dependence," Reliability Physics Symposium (IRPS), 2013 IEEE International, Anaheim, CA, 2013, pp. XT.2.1-XT.2.11. doi: 10.1109/IRPS.2013.6532117
  2. J. R. Jameson W. Harrison P. B. Griffin and J. D. Plummer "Double-well model of dielectric relaxation current " Appl. Phys. Lett. 2004 84 3489.
    DOI: 10.1063/1.1738177
  3. J. R. Jameson, W. Harrison, P. B. Griffin, J. D. Plummer, and Y. Nishi “A semiclassical model of dielectric relaxation in glasses,” J. Appl.Phys., 2006, no. 100, pp. 124104-1 – 124104-8.
  4. T. Grasser, B. Kaczer and W. Goes, "An energy-level perspective of bias temperature instability," 2008 IEEE International Reliability Physics Symposium, Phoenix, AZ, 2008, pp. 28-38. doi: 10.1109/RELPHY.2008.4558859

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Researchers should cite this work as follows:

  • Rakesh P Rao; Narendra Parihar; Sujay Desai; Souvik Mahapatra (2016), "BTI Simulator for Two Well Thermionic Model,"

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