This simulator calculates the kinetics associated with hydrogen release from the Gate during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Gate-sided Hydrogen Release (a.k.a Dispersive-Reaction) Model". The simulator can calculate threshold voltage shift due to trap generation during and after DC stress and during AC stress.
The zip file contains setup instructions (setup guide) and model specific instructions (readme), besides the C based code (executable), input deck and example files and plots. You are advised to read the setup and readme files before installation and running the simulator.
You have to install Gnuplot 5.0.4 and Notepad++, refer to setup guide for more details.
. T. Grasser et al., "Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes," 2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, 2015, pp. 20.1.1-20.1.4.
. T. Grasser et al., "The “permanent” component of NBTI revisited: Saturation, degradation-reversal, and annealing," 2016 IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA, 2016, pp. 5A-2-1-5A-2-8.
. T. Grasser et al., "On the volatility of oxide defects: Activation, deactivation, and transformation," 2015 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, 2015, pp. 5A.3.1-5A.3.8.
Cite this work
Researchers should cite this work as follows:
- Permanent component
- Trap generation
- Gate Sided Hydrogen Release Model
- Dispersive Reaction