Modeling of Inter-ribbon Tunneling in Graphene

By Maarten Van de Put, William Gerard Hubert Vandenberghe, Massimo V Fischetti

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Abstract

IWCE presentation. Recently, resonant tunneling has been observed in stacked graphene flakes[1]. The rotational misalignment introduces an offset between the Dirac-cones in both flakes, resulting in negative differential resistance when shifting the Dirac-cones under bias.

In this paper we investigate the finite-size effect in nano-scaled graphene flakes. Improving on the bulk description, and because the structures are – atomistically speaking – large in size, we use the empirical pseudopotential method[2].

Original title: "Overlaps in Stacked Graphene Flakes Using Empirical Pseudopotentials"

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References

  1. A Mishchenko, JS Tu, Y Cao, RV Gorbachev, JRWallbank, MT Greenaway, VE Morozov, SV Morozov, MJ Zhu, SL Wong, et al. Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures. Nature nanotechnology, 9(10):808–813, 2014.
  2. Massimo V Fischetti and Sudarshan Narayanan. An empirical pseudopotential approach to surface and line-edge roughness scattering in nanostructures: Application to si thin films and nanowires and to graphene nanoribbons, Journal of Applied Physics, 110(8):083713, 2011.

Cite this work

Researchers should cite this work as follows:

  • Maarten L Van de Put, William G Vandenberghe, W Magnus, B Soree, MV Fischetti, Modeling of inter-ribbon tunneling in graphene, 2015 International Workshop on Computational Electronics (IWCE), 2015.

  • Maarten Van de Put; William Gerard Hubert Vandenberghe; Massimo V Fischetti (2016), "Modeling of Inter-ribbon Tunneling in Graphene," http://nanohub.org/resources/25276.

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Location

North Ballroom, PMU, Purdue University, West Lafayette, IN

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