Rode's Method

Calculates low field mobility in III-V semiconductors

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Published on 26 Mar 2008 All versions

doi:10.4231/D3154DN81 cite this

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Abstract

Rode's method for calculating low Field electron mobility [1,2] is a technique with good convergence and stability properties that provides a straightforward physical interpretation of the exact transport equations. Its simple formalism makes generalization possible to include Fermi statistics, energy band nonparabolicity, s-type and p-type electron wave function admixture, arbitrary time dependence, and combination of various scattering mechanisms. This method gives accurate results for most cases concerning direct semiconductors. The III-V crystals are, for the most part, covalently bonded and possess the zinc-blende structure. Most of the III-V semiconductors are direct and are therefore well suited to the model assumed by Rode's technique.

With this interface, you can change parameters and compare the results of various runs to gain better understanding of which inputs affect low-field electron mobility the most.

Credits

The underlying "rode" program was written by Umberto Ravaioli and Massimo Macucci.

References

  • D. L. Rode, Low-field electron transport, (R. K. Willardson, A. C. Beer), Semiconductors and Semimetals, Academic Press, New York – London, 10, 1–90 (1975).
  • D. L. Rode, Physical Review B, “Electron mobility in direct-gap polar semiconductors”, 2, 1012 (1970).

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      1. Simulations were performed by Low Field Mobility on http://nanohub.org

    • Mohamed Mohamed, Anjali Bharthuar, Umberto Ravaioli (2014), "Rode's Method," https://nanohub.org/resources/lfmobility. (DOI: 10.4231/D3154DN81).

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    Tags

    1. drift-diffusion
    2. educational tool
    3. materials science
    4. nanoelectronics