Support

Support Options

Submit a Support Ticket

 

Rode's Method

Calculates low field mobility in III-V semiconductors

Launch Tool

You must login before you can run this tool.

Archive Version 1.0
Published on 28 Nov 2006
Latest version: 1.2. All versions

This tool is closed source.

Category

Tools

Published on

Abstract

Rode's method for calculating low Field electron mobility [1,2] is a technique with good convergence and stability properties that provides a straightforward physical interpretation of the exact transport equations. Its simple formalism makes generalization possible to include Fermi statistics, energy band nonparabolicity, s-type and p-type electron wave function admixture, arbitrary time dependence, and combination of various scattering mechanisms. This method gives accurate results for most cases concerning direct semiconductors. The III-V crystals are, for the most part, covalently bonded and possess the zinc-blende structure. Most of the III-V semiconductors are direct and are therefore well suited to the model assumed by Rode's technique.

With this interface, you can change parameters and compare the results of various runs to gain better understanding of which inputs affect low-field electron mobility the most.

Credits

The underlying \"rode\" program was written by Umberto Ravaioli and Massimo Macucci.

References

  • D. L. Rode, Low-field electron transport, (R. K. Willardson, A. C. Beer), Semiconductors and Semimetals, Academic Press, New York – London, 10, 1–90 (1975).
  • D. L. Rode, Physical Review B, “Electron mobility in direct-gap polar semiconductors”, 2, 1012 (1970).
  • Cite this work

    Researchers should cite this work as follows:

    • If you are using the tool for any publication, we request that you cite:

      1. Simulations were performed by Low Field Mobility on http://nanohub.org

    • (2014), "Rode's Method," http://nanohub.org/resources/lfmobility.

      BibTex | EndNote

    Tags

    nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.