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Rode's Method

By Mohamed Mohamed1, Anjali Bharthuar1, Umberto Ravaioli1

1. University of Illinois at Urbana-Champaign

Calculates low field mobility in III-V semiconductors

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Archive Version 1.1
Published on 26 Mar 2008
Latest version: 1.2. All versions

doi:10.4231/D3154DN81 cite this

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Abstract

Rode's method for calculating low Field electron mobility [1,2] is a technique with good convergence and stability properties that provides a straightforward physical interpretation of the exact transport equations. Its simple formalism makes generalization possible to include Fermi statistics, energy band nonparabolicity, s-type and p-type electron wave function admixture, arbitrary time dependence, and combination of various scattering mechanisms. This method gives accurate results for most cases concerning direct semiconductors. The III-V crystals are, for the most part, covalently bonded and possess the zinc-blende structure. Most of the III-V semiconductors are direct and are therefore well suited to the model assumed by Rode's technique.

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