Illinois Tools: MOCA

By Mohamed Mohamed1; Umberto Ravaioli1; Nahil Sobh1; derrick kearney2

1. University of Illinois at Urbana-Champaign 2. Purdue University

A 2D Full-band Monte Carlo (MOCA) Simulation of SOI Device Structures

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Version 1.2 - published on 18 Sep 2014

doi:10.4231/D3WH2DF98 cite this

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Abstract

MOCA is a full-band Monte Carlo Simulator code developed at the University of Illinois. This version is suitable for 2D simulation of silicon devices. Quantum correction approach to account for size quantization in narrow channels has been adopted.

Credits

Computational Electronics Group, University of Illinois at Urbana-Champaign. This work was funded by NSF.

References

  • Monte Carlo Device Simulation: Full Band and Beyond by Karl Hess, Kluwer Academic Publishers, 1991.

    • Cite this work

    Researchers should cite this work as follows:

    • G. Kathawala, B. Winstead, and U. Ravaioli, ''Monte Carlo simulations of double-gate MOSFETs'', IEEE Transactions on Electron Devices, vol. 50, issue 12, pp. 2467-2473 (2003).

    • Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney (2014), "Illinois Tools: MOCA," https://nanohub.org/resources/moca. (DOI: 10.4231/D3WH2DF98).

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    Tags

    1. educational tool
    2. microelectronics
    3. Monte Carlo
    4. MOS
    5. MOS capacitors
    6. MOSFET
    7. nanoelectronics
    8. quantum
    9. SOI devices
    10. transport/Boltzmann