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Illinois Tools: MOCA

By Mohamed Mohamed1, Umberto Ravaioli1, Nahil Sobh1

1. University of Illinois at Urbana-Champaign

2D Full-band Monte Carlo Simulation of SOI Device Structures

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Version 1.1 - published on 19 Mar 2009

doi:10.4231/D3HH6C54Z cite this

This tool is closed source.

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  1. 0 Like 0 Dislike

    Sumit Dutta

    4.0 out of 5 stars

    The simulation and preset values make sense. There could be some more input parameters though such as channel length.

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    1. Mohamed Mohamed

      The gate length and the source/drain extension are given as input parameters. You may adjust the channel length use that. If you choose to have zero source/drain extension then the channel length = the gate length.

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      Please login to vote., a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.