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MOCA

A 2D Full-band Monte Carlo (MOCA) Simulation of SOI Device Structures

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Archive Version 1.0
Published on 28 Mar 2007, unpublished on 19 Mar 2009
Latest version: 1.2. All versions

This tool is closed source.

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Abstract

MOCA is a full-band Monte Carlo Simulator code developed at the University of Illinois. This version is suitable for 2D simulation of silicon devices. Quantum correction approach to account for size quantization in narrow channels has been adopted.

Credits

Computational Electronics Group, University of Illinois at Urbana-Champaign. This work was funded by NSF.

References

  • Monte Carlo Device Simulation: Full Band and Beyond by Karl Hess, Kluwer Academic Publishers, 1991.
  • Cite this work

    Researchers should cite this work as follows:

    • If you are using the tool for any publication, we request that you cite:

      1. B. Winstead and U. Ravaioli, “A quantum correction based on Schrodinger equation applied to Monte Carlo device simulation,” IEEE Trans. Electron Devices, vol. 50, pp. 440–446, Feb., 2003.
      2. G. Kathawala, M. Mohamed, and U. Ravaioli, “Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation “, Journal of Computational Electronics, Vol. 2, pp. 85-89, 2004.
      3. Simulations were performed by MOCA on http://nanohub.org
    • (2014), "MOCA," http://nanohub.org/resources/moca.

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    nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.