Equipment, Techniques, and Growth of Ultra-High Purity AlGaAs-GaAs Heterostructures by Molecular Beam Epitaxy

By Geoff Gardner

Birck Nanotechnology Center, Purdue University, West Lafayette, IN

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Abstract

Ultra-high purity aluminum gallium arsenide (AlGaAs)-gallium arsenide (GaAs) heterostructures grown by molecular beam epitaxy (MBE) that host a two-dimensional electron gas (2DEG) are a rich environment for the study of fundamental condensed matter physics and may have applications for quantum computing. I will detail research and investigation into critical equipment and materials engineering issues related to the quality of the fabricated 2DEG systems. I also will present data that demonstrates the critical role gallium purity plays in 2DEG mobility.

Bio

Geoff Gardner Geoff Gardner received his B.S. and M.S. degrees from Purdue University in Physics with a minor in Electrical and Computer Engineering.  He has held various engineering positions at the Purdue Applied Physics Laboratory and Birck Nanotechnology Center over the past 12 years and currently is a Senior Research Associate for Station Q Purdue.  He has been working closely with Professor Michael Manfra, the Bill and Dee O'Brien Chair Professor of Physics and Astronomy and director of Station Q Purdue, since 2010.

Cite this work

Researchers should cite this work as follows:

  • Geoff Gardner (2017), "Equipment, Techniques, and Growth of Ultra-High Purity AlGaAs-GaAs Heterostructures by Molecular Beam Epitaxy," http://nanohub.org/resources/26615.

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Time

Location

Room 1001, Birck Nanotechnology Center, Purdue University, West Lafayette, IN

Tags

  1. 2deg
  2. quantum computing
  3. Material Science
  4. AlGaAs
  5. GaAs
  6. mbe