This simulator calculates the kinetics associated with trapping and trap generation during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Two-Stage Model". The simulator can calculate threshold voltage shift due to trapping and trap generation during and after DC stress and during AC stress.
The zip file contains setup instructions (setup guide) and model specific instructions (readme), besides the C based code (executable), input deck and example files and plots. You are advised to read the setup and readme files before installation and running the simulator.
You have to install Gnuplot 5.0.4 and Notepad++, refer to setup guide for more details.
- T. Grasser, B. Kaczer, W. Goes, T. Aichinger, P. Hehenberger and M. Nelhiebel, "A two-stage model for negative bias temperature instability," 2009 IEEE International Reliability Physics Symposium, Montreal, QC, 2009, pp. 33-44. DOI: 10.1109/IRPS.2009.5173221 URL: http://ieeexplore.ieee.org/document/5173221/
- W. Goes, T. Grasser, M. Karner and B. Kaczer, "A Model for Switching Traps in Amorphous Oxides," 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, 2009, pp. 1-4. DOI: 10.1109/SISPAD.2009.5290226 URL: http://ieeexplore.ieee.org/document/5290226/
- S. Gupta, B. Jose, K. Joshi, A. Jain, M. A. Alam and S. Mahapatra, "A comprehensive and critical re-assessment of 2-stage energy level NBTI model," 2012 IEEE International Reliability Physics Symposium (IRPS), Anaheim, CA, 2012, pp. XT.3.1-XT.3.6. DOI:10.1109/IRPS.2012.6241933 URL: http://ieeexplore.ieee.org/document/6241933/
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