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This compact model calculates spin-relaxation lengths (SRLs) and effective mean-free path (MFP) of carriers in nanoscale metallic interconnects by incorporating contributions to spin relaxation from phonon-induced and defect-induced scatterings. This tool has been exhaustively calibrated with experimental data from mesoscopic lateral spin valves.
This simulation tool is also useful to predict the carrier mobility, diffusion coefficient, and conductivity in ultra-scaled metallic interconnects with cross-sectional dimensions of only few hundreds of nm2.
NNCI Computation Group @ Georgia Tech
This project is supported by National Nanotechnology Coordinated Infrastructure (NNCI).
 S. Rakheja, S. C. Chang, and A. Naeemi, "Impact of Dimensional Scaling and Size Effects on Spin Transport in Copper and Aluminum Interconnects", in IEEE Transactions on Electron Devices, vol. 60, no. 11, pp. 3913-3919, Nov. 2013
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