Atomic Layer Epitaxy Dielectrics for III-N MOS Technology

By Peide "Peter" Ye

Electrical and Computer Engineering, Purdue University, West Lafayette, IN

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Researchers should cite this work as follows:

  • Peide "Peter" Ye (2017), "Atomic Layer Epitaxy Dielectrics for III-N MOS Technology," http://nanohub.org/resources/27439.

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B10, MSEE, Purdue University, West Lafayette, IN