Selective Silicon Epitaxy Seen at the Nanometer Scale
Category
Published on
Abstract
The presenter introduces NEMS (nanoelectromechanical systems) and STM (Scanning Tunneling Microscopy and continues to present material on Selective Silicon Epitaxy seen at the Nanometer Scale
Bio
Matthew M. Sztelle is a Research Assistant in the Scanning Tunneling Microscopy Group at the Beckman Institute for Advanced Science and Technology at the University of Illinois at Urbana-Champaign.
Sponsored by
Scanning Tunneling Microscopy Group
Beckman Institute for Advanced Science and Technology
University of Illinois at Urbana-Champaign
Nanohour Seminar Series
Beckman Institute for Advanced Science and Technology
University of Illinois at Urbana-Champaign
Nanohour Seminar Series
Cite this work
Researchers should cite this work as follows: