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Selective Silicon Epitaxy Seen at the Nanometer Scale

By Matthew Mark Sztelle

University of Illinois at Urbana-Champaign

Published on

Abstract

The presenter introduces NEMS (nanoelectromechanical systems) and STM (Scanning Tunneling Microscopy and continues to present material on Selective Silicon Epitaxy seen at the Nanometer Scale

Bio

Matthew M. Sztelle is a Research Assistant in the Scanning Tunneling Microscopy Group at the Beckman Institute for Advanced Science and Technology at the University of Illinois at Urbana-Champaign.

Sponsored by

Scanning Tunneling Microscopy Group
Beckman Institute for Advanced Science and Technology
University of Illinois at Urbana-Champaign
Nanohour Seminar Series

Cite this work

Researchers should cite this work as follows:

  • Matthew Mark Sztelle (2007), "Selective Silicon Epitaxy Seen at the Nanometer Scale," http://nanohub.org/resources/2810.

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