n-type and p-type biasing regions for MOS capacitors

By lawrence normAN LEBLANC

UCSD

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Abstract

This short tutorial illustrates the majority and minority charge carrier distributions in an MOS capacitor under three different biasing conditions: Accumulation, Depletion, and Inversion, for both n- and p-type structures and provides a simple mnemonic for the order of the biasing regions on a line plot of the voltage ranges.

 

 

 

Cite this work

Researchers should cite this work as follows:

  • lawrence normAN LEBLANC (2018), "n-type and p-type biasing regions for MOS capacitors," http://nanohub.org/resources/29062.

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Submitter

Tanya Faltens

Purdue University

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