n-type and p-type biasing regions for MOS capacitors

By Lawrence Norman LeBlanc


Published on


This short tutorial illustrates the majority and minority charge carrier distributions in an MOS capacitor under three different biasing conditions: Accumulation, Depletion, and Inversion, for both n- and p-type structures and provides a simple mnemonic for the order of the biasing regions on a line plot of the voltage ranges.




Cite this work

Researchers should cite this work as follows:

  • Lawrence Norman LeBlanc (2018), "n-type and p-type biasing regions for MOS capacitors," http://nanohub.org/resources/29062.

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Tanya Faltens

Purdue University