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Electronics From the Bottom Up: top-down/bottom-up views of length

By Muhammad A. Alam

Purdue University

Published on


When devices get small stochastic effects become important. Random dopant effects lead to uncertainties in a MOSFET’s threshold voltage and gate oxides breakdown is a random process. Even a concept as simple as “channel length” becomes uncertain. This short (20 min) talk, a footnote to the presentation, “An Introduction to Electronics from the Bottom Up,” shows that these two seemingly unrelated problems are part of a more general problem involving percolative transport at the nanoscale.

For a complete list of resources related to this project please see: Electronics from the Bottom Up.

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Researchers should cite this work as follows:

  • Muhammad A. Alam (2007), "Electronics From the Bottom Up: top-down/bottom-up views of length,"

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