Electronics From the Bottom Up: top-down/bottom-up views of length
| Category | Online Presentations |
|---|---|
| Abstract | When devices get small stochastic effects become important. Random
dopant effects lead to uncertainties in a MOSFET’s threshold voltage
and gate oxides breakdown is a random process. Even a concept as
simple as “channel length” becomes uncertain. This short (20 min)
talk, a footnote to the presentation, “An Introduction to Electronics
from the Bottom Up,” shows that these two seemingly unrelated
problems are part of a more general problem involving percolative
transport at the nanoscale.
For a complete list of resources related to this project please see: Electronics from the Bottom Up. |
| Sponsored by | Intel Corporation National Science Foundation Network for Computational Nanotechnology |
| Cite this work | Researchers should cite this work as follows: |
| Time | July 06, 2007 |
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