When devices get small stochastic effects become important. Random dopant effects lead to uncertainties in a MOSFET’s threshold voltage and gate oxides breakdown is a random process. Even a concept as simple as “channel length” becomes uncertain. This short (20 min) talk, a footnote to the presentation, “An Introduction to Electronics from the Bottom Up,” shows that these two seemingly unrelated problems are part of a more general problem involving percolative transport at the nanoscale.
For a complete list of resources related to this project please see: Electronics from the Bottom Up.
Researchers should cite this work as follows: