Nanoelectronics Research Initiative
This resource belongs to the Nanoelectronics Research Initiative group.
Spintronics logic devices based on majority gates formed by atomic-level arrangements of spins in the crystal lattice is considered. The dynamics of switching is modeled by time-dependent solution of the density-matrix equation with relaxation. The devices are shown to satisfy requirements for logic. Switching speed and dissipated energy are calculated and compared with electronic transistors. The simulations show that for the highly idealized case assumed here, it is possible to trade off size for speed and achieve lower power operation than ultimately scaled CMOS devices.
- Magnetization state in a Straight Wire:
Direction of magnetization
in an atomistic MQCA, top view. Inverter in the wire. Input spins are set on the left, the spin wave propagates to the right.
(see Figure 3 in text for the color code)
- Magnetization state in a Mjority Gate:
Direction of magnetization in an atomistic MQCA, top view, majority gate. The three inputs are set by spins on the right, top, and bottom. The spin waves interact in the center and determine the magnetization in the output (right).
(see Figure 4 in text for the color code)
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