[Audio] NCN Nanoelectronics: TutorialsFrom among the many tutorial lectures available on the nanoHUB, we list a few that convey new approaches to electronics.
http://nanohub.org/resources/3575
Tue, 07 Jul 2015 13:23:30 +0000HUBzero - The open source platform for scientific and educational collaborationFrom among the many tutorial lectures available on the nanoHUB, we list a few that convey new approaches to electronics.nanoHUB.orgsupport@nanohub.orgnonanoelectronics, tutorialen-gbCopyright 2015 nanoHUB.orgResourcesBandstructure in Nanoelectronics
http://nanohub.org/resources/381
This presentation will highlight, for nanoelectronic device examples, how the effective mass approximation breaks down and why the quantum mechanical nature of the atomically resolved material needs to be included in the device modeling. Atomistic bandstructure effects in resonant tunneling diodes, ultra-scales Si slabs, Si nanowires, and alloyed quantum dots will be demonstrated in intuitive pictures. The presentation concludes with a brief overview of the empirical tight-binding method that bridges the gap between material science, physics, and electrical engineering for the quantitative design and analysis of nanoelectronic devices.This presentation will highlight, for nanoelectronic device examples, how the effective mass approximation breaks down and why the quantum mechanical nature of the atomically resolved material needs to be included in the device modeling. Atomistic bandstructure effects in resonant tunneling diodes, ultra-scales Si slabs, Si nanowires, and alloyed quantum dots will be demonstrated in intuitive pictures. The presentation concludes with a brief overview of the empirical tight-binding method that bridges the gap between material science, physics, and electrical engineering for the quantitative design and analysis of nanoelectronic devices.62 min.noalgorithms, band structure, devices, from Purdue, hosted/taped by NCN@Purdue, materials science, multiscale models, nanoelectronics, nanotransistors, NEGF, quantum dots, tutorial, visualizationGerhard KlimeckGerhard KlimeckOnline PresentationsTue, 01 Nov 2005 10:00:00 +0000/http://nanohub.org/site/resources/2006/03/01134/2005.11.02-Klimeck.mp3Simple Theory of the Ballistic MOSFET
http://nanohub.org/resources/491
Silicon nanoelectronics has become silicon nanoelectronics, but we still analyze, design, and think about MOSFETs in more or less in the same way that we did 30 years ago. In this talk, I will describe a simple analysis of the ballistic MOSFET. No MOSFET is truly ballistic, but approaching this familiar device from a different perspective can be useful. The talk will introduce a very simple, general model, then apply it to the planar MOSFET. My objective is to describe the theory in enough detail so that you can intelligently use the program, FETToy, or write a more general program yourself.Silicon nanoelectronics has become silicon nanoelectronics, but we still analyze, design, and think about MOSFETs in more or less in the same way that we did 30 years ago. In this talk, I will describe a simple analysis of the ballistic MOSFET. No MOSFET is truly ballistic, but approaching this familiar device from a different perspective can be useful. The talk will introduce a very simple, general model, then apply it to the planar MOSFET. My objective is to describe the theory in enough detail so that you can intelligently use the program, FETToy, or write a more general program yourself.noballistic MOSFET, devices, education/outreach, from Purdue, hosted/taped by NCN@Purdue, molecular electronics, nanoelectronics, nanotransistors, NEGF, tutorialMark LundstromMark LundstromOnline PresentationsWed, 19 Oct 2005 09:00:00 +0000/http://nanohub.org/site/resources/2006/06/01585/2005.10.11-Lundstrom.mp3The Long and Short of Pick-up Stick Transistors: A Promising Technology for Nano- and Macro-Electronics
http://nanohub.org/resources/1214
In recent years, there has been enormous interest in the emerging field of large-area macro-electronics, and fabricating thin-film transistors on flexible substrates. This talk will cover recent work in developing a comprehensive theoretical framework to describe the performance of these "pick-up stick" transistors and to show that an intuitive generalization of finite-size stick percolation theory can consistently interpret a broad range of experimental data reported in the literature.In recent years, there has been enormous interest in the emerging field of large-area macro-electronics, and fabricating thin-film transistors on flexible substrates. This talk will cover recent work in developing a comprehensive theoretical framework to describe the performance of these "pick-up stick" transistors and to show that an intuitive generalization of finite-size stick percolation theory can consistently interpret a broad range of experimental data reported in the literature.noalgorithms, carbon nanotubes, devices, education/outreach, from Purdue, hosted/taped by NCN@Purdue, materials science, molecular electronics, multiscale models, nano/bio, nanotransistors, nanowires, tutorialMuhammad A. AlamMuhammad A. AlamOnline PresentationsTue, 11 Apr 2006 22:36:55 +0000/http://nanohub.org/site/resources/2006/05/01272/2006.04.11-Alam.mp3Design in the Nanometer Regime: Process Variation
http://nanohub.org/resources/2018
Scaling of technology over the last few decades has produced an exponential growth in computing power of integrated circuits and an unprecedented number of transistors integrated into a single. However, scaling is facing several problems — severe short channel effects, exponential increase in leakage current, increased process parameter variations, and new reliability concerns.Scaling of technology over the last few decades has produced an exponential growth in computing power of integrated circuits and an unprecedented number of transistors integrated into a single. However, scaling is facing several problems — severe short channel effects, exponential increase in leakage current, increased process parameter variations, and new reliability concerns.nodevices, from Purdue, hosted/taped by NCN@Purdue, nanoelectronics, nanotransistorsKaushik RoyKaushik RoyOnline PresentationsWed, 29 Nov 2006 20:00:44 +0000/http://nanohub.org/site/resources/2006/11/02022/2006.11.10-roy-nt501.mp3Design of CMOS Circuits in the Nanometer Regime: Leakage Tolerance
http://nanohub.org/resources/2023
The scaling of technology has produced exponential growth in transistor development and computing power in the last few decades, but scaling still presents several challenges. These two lectures will cover device aware CMOS design to address power, reliability, and process variations in scaled technologies for different application domains: high-performance with power as constraint and ultra-low power with reasonable performance.The scaling of technology has produced exponential growth in transistor development and computing power in the last few decades, but scaling still presents several challenges. These two lectures will cover device aware CMOS design to address power, reliability, and process variations in scaled technologies for different application domains: high-performance with power as constraint and ultra-low power with reasonable performance.nodevices, from Purdue, hosted/taped by NCN@Purdue, nanoelectronics, nanotransistorsKaushik RoyKaushik RoyOnline PresentationsWed, 29 Nov 2006 00:38:54 +0000/http://nanohub.org/site/resources/2006/11/02029/2006.11.17-roy-nt501.mp3