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Carrier Statistics Lab

Calculate the electron & hole density in semiconductors

Launch Tool

This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 1.02
Published on 04 Mar 2009, unpublished on 10 Jun 2009
Latest version: 2.3. All versions

doi:10.4231/D3901ZF73 cite this

This tool is closed source.



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This is a simple tool that demonstrates electron and hole density distributions based on the Fermi-Dirac and Maxwell Boltzmann equations. This tool shows the dependence of carrier density, densisty of states and occupation factor on temperature and fermi level. User can choose between doped and undoped semi-conductors. Silicon, Germanium, and GaAs can be studied as a function of doping or Fermi level, and temperature.

The tool is supported by a homework assignment in which Students are asked to explore the differences between Fermi-Dirac and Maxwell-Boltzmann distributions, compute electron and hole concentrations, study temperature dependences, and study freeze-out.

Bug Fixes

Corrected the display of certain outputs.

Small Updates

Updated the Front pane of the tool with correct figures of the distributions.

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.