Carrier Statistics Lab

This tool calculates the electron and hole density in semiconductors.

Launch Tool

This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 2.0.3
Published on 20 Oct 2009
Latest version: 2.3. All versions

doi:10.4231/D36T0GW16 cite this

This tool is closed source.



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This is a simple tool that demonstrates electron and hole density distributions based on the Fermi-Dirac and Maxwell Boltzmann equations. It shows the dependence of carrier density, densisty of states, and occupation factor on temperature and fermi level. Users can choose between doped and undoped semi-conductors. Silicon, Germanium, and GaAs can be studied as a function of doping or Fermi level and temperature.

Homework: The tool is supported by a homework assignment in which students are asked to explore the differences between Fermi-Dirac and Maxwell-Boltzmann distributions, compute electron and hole concentrations, study temperature dependences, and study freeze-out.

First Time User Guide:

This document provides important information about the tool, underlying physics and some assignment problems to help the user to get acquainted with the tool.

Bug Fixes:

Corrected the display of certain outputs.

Recent upgrades with subsequent versions:

Sponsored by



  • Semiconductor Device Fundamentals , Robert Pierret
  • Physics of Semiconductor Devices, S M Sze

Cite this work

Researchers should cite this work as follows:

  • Saumitra Raj Mehrotra; Abhijeet Paul; Gerhard Klimeck (2014), "Carrier Statistics Lab," (DOI: 10.4231/D36T0GW16).

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