The support of NASA Goddard Space Flight Center and the National Science Foundation IREE, PREM, CREST and REU programs are gratefully acknowledged. B.W.J would like to thank the NASA Goddard Graduate Student Researchers Program. All nanocircuits were fabricated at the W. M. Keck Microfabrication Facility at Michigan State University.
- Benjamin W. Jacobs, Virginia M. Ayres, Mihail P. Petkov, Joshua B. Halpern, MaoQeHe, Andrew D. Baczewski, KayleeMcElroy, Martin A. Crimp, JiamingZhang, Harry C. Shaw, “Electronic and Structural Characteristics of Zinc-Blende Wurtzite Biphasic Homostructure GaN Nanowires”, Nano Lett., Vol. 7, No. 5, pp. 1435-1438 (2007)
- B W Jacobs, V M Ayres, R E Stallcup, A Hartman, M A Tupta, A D Baczewski, M A Crimp, J B Halpern, M He and H C Shaw, “Electron Transport in Zinc-Blende Wurtzite Biphasic Gallium Nitride Nanowires and GaNFETs”, Nanotech., Vol. 18, 475710 (6 pp) (2007)
- V.M. Ayres, B.W. Jacobs, M.E. Englund, E.H. Carey, M.A. Crimp, R.M. Ronningen, A.F. Zeller, J.B. Halpern, M.-Q. He, G.L. Harris, D. Liu, H.C. Shaw and M.P. Petkov, “Investigation of Heavy Ion Irradiation of Gallium Nitride Nanowires and Nanocircuits”, Diamond and Relat. Mater., Vol. 15, pp. 1117-1123 (2006) ]
- M. He, P. Zhou, S.N. Mohammad, G.L. Harris, J.B. Halpern, R. Jacobs, W.L. Sarney, L Salamanca-Riba, “Growth of GaN nanowires by direct reaction of Ga with NH3”, J. of Crystal Growth, Vol. 231 (2001) 357.
Researchers should cite this work as follows:
EE 317, Purdue University, West Lafayette, IN