Atomistic Electronic Structure Calculations of Unstrained Alloyed Systems Consisting of a Million Atoms
- Alloy Disorder Scattering
- Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors
- Quantitative Multi-Million Atom Simulations for Quantum Dots and Single Impurities in Si
- Calculation of the Matrix Elements for Alloy Scattering
- Why quantum dot simulation domain must contain multi-million atoms?