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Valley splitting in strained silicon quantum wells modeled with 2 degree miscuts, step disorder, and alloy disorder

By Neerav Kharche1, marta prada1, Timothy Boykin2, Gerhard Klimeck1

1. Purdue University 2. University of Alabama in Huntsville, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.