Drift-Diffusion Lab

Simulate single semiconductor characteristics

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Archive Version 1.131
Published on 16 Sep 2008, unpublished on 18 Sep 2008 All versions

doi:10.4231/D3CC0TS8F cite this



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This tool enables a user to understand the basic concepts of DRIFT and DIFFUSION of carriers inside a semiconductor slab using different kinds of experiments. Experiments like shining light on the semiconductor, applying bias and both can be performed. This tool provides important information about carrier densities, transient and steady state currents, fermi-levels and electrostatic potentials.

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PADRE (Pisces And Device REplacement) developed by Mark Pinto & Kent Smith at AT&T Bell Labs.

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Cite this work

Researchers should cite this work as follows:

  • Saumitra Raj Mehrotra; Abhijeet Paul; Gerhard Klimeck (2014), "Drift-Diffusion Lab," http://nanohub.org/resources/semi. (DOI: 10.4231/D3CC0TS8F).

    BibTex | EndNote


  1. nanoelectronics
  2. drift
  3. diffusion
  4. transient
  5. excess carriers
  6. nanoelectronics
  7. drift
  8. diffusion
  9. transient
  10. excess carriers
  11. nanoelectronics
  12. drift
  13. diffusion
  14. transient
  15. excess carriers
  16. NCN Supported
  17. NCN@Purdue Supported
  18. NCN Supported
  19. NCN@Purdue Supported
  20. nanoelectronics
  21. diffusion
  22. drift
  23. excess carriers
  24. NCN Supported
  25. NCN@Purdue Supported
  26. transient