Drift-Diffusion Lab

Simulate single semiconductor characteristics

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Archive Version 1.8
Published on 04 Aug 2009, unpublished on 13 Aug 2009
Latest version: 1.8.4. All versions

doi:10.4231/D3C53F13P cite this

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This tool enables a user to understand the basic concepts of DRIFT and DIFFUSION of carriers inside a semiconductor slab using different kinds of experiments. Experiments like shining light on the semiconductor, applying bias and both can be performed. This tool provides important information about carrier densities, transient and steady state currents, fermi-levels and electrostatic potentials.

Improvements / modifications in subsequent version releases:

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PADRE (Pisces And Device REplacement) developed by Mark Pinto & Kent Smith at AT&T Bell Labs.

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Cite this work

Researchers should cite this work as follows:

  • Saumitra Raj Mehrotra; Abhijeet Paul; Gerhard Klimeck; Gloria Wahyu Budiman (2014), "Drift-Diffusion Lab," http://nanohub.org/resources/semi. (DOI: 10.4231/D3C53F13P).

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