Drift-Diffusion Lab

Simulate single semiconductor characteristics

Launch Tool

This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 1.8.3
Published on 16 Aug 2010 All versions

doi:10.4231/D36Q1SG88 cite this



Published on


This tool enables users to understand the basic concepts of the drift and diffusion of carriers inside a semiconductor slab using different kinds of experiments. Experiments like shining light on the semiconductor, applying bias, or both can be performed. This tool provides important information about carrier densities, transient and steady state currents, fermi-levels and electrostatic potentials.
    Typical simulation runtime : Less than a minute
    Improvements / modifications in subsequent version releases:
  • 1.8.3 - Added Field dependent and Concentration dependent mobility.
  • 1.8.2 - Fixed for overwriting of previous simulation runs.
  • 1.8.1 - 'Net Recombination' plot changed to 'Net Thermal Recombination' plot. Photo-generation rate is not included in the calculation.
  • 1.8 - Fixed potential plot for 'Bias only' case to show zero slope at equilibrium. Fixed recombination rate plot - It now reads 'Net Recombination' (+ve values mean net recombination & -ve values mean net generation in the bar).
  • 1.7 - Meshing made robust to treat different examples.
  • 1.6 - Added option for solution of Electrons and Holes simultaneously (Ambipolar), Electron only & Hole only contunuity equations. Fixed for improved meshing.
  • 1.5 - Updated to include carrier mobility in the input deck. Fixed for Absorption length for light shine experiments. Corrected for carrier concentration near edges with No Surface recombination at both ends.
  • 1.4 - Included status bar for running simulations.
  • 1.32 - Changed penetration depth for light shine at the edge. Thin penetration is allowed now.
  • 1.131 - Fixed for minor error in meshing. Accurate definition of mesh with light shine option.
  • 1.13 - Fixed for error in Surface Recombination Velocity (cm/s) at the contacts and added another tab to for it. Recombination velocity can now be defined for electrons and holes and at both contacts separately.
  • 1.11 - Added Surface Recombination Velocity (cm/s) in input deck .
  • 1.1 - Updated for GUI. Carrier Generation Rate (/cm2/s) with light shine is user defined. Added Current density in output plot J(x)
  • 1.0 - 1D linear Drift-Diffusion simulator launched.

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Cite this work

Researchers should cite this work as follows:

  • Gerhard Klimeck; Saumitra Raj Mehrotra; Nicholas K Kisseberth; Abhijeet Paul (2014), "Drift-Diffusion Lab," http://nanohub.org/resources/semi. (DOI: 10.4231/D36Q1SG88).

    BibTex | EndNote


  1. nanoelectronics
  2. drift
  3. diffusion
  4. transient
  5. excess carriers
  6. nanoelectronics
  7. drift
  8. diffusion
  9. transient
  10. excess carriers
  11. nanoelectronics
  12. drift
  13. diffusion
  14. transient
  15. excess carriers
  16. NCN Supported
  17. NCN@Purdue Supported
  18. NCN Supported
  19. NCN@Purdue Supported
  20. nanoelectronics
  21. diffusion
  22. drift
  23. excess carriers
  24. NCN Supported
  25. NCN@Purdue Supported
  26. transient