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Drift-Diffusion Lab

By Gerhard Klimeck1, Saumitra Raj Mehrotra1, Nicholas K Kisseberth1, Abhijeet Paul1

1. Purdue University

Simulate single semiconductor characteristics

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Archive Version 1.8.3
Published on 16 Aug 2010
Latest version: 1.8.4. All versions

doi:10.4231/D36Q1SG88 cite this

This tool is closed source.



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This tool enables users to understand the basic concepts of the drift and diffusion of carriers inside a semiconductor slab using different kinds of experiments. Experiments like shining light on the semiconductor, applying bias, or both can be performed. This tool provides important information about carrier densities, transient and steady state currents, fermi-levels and electrostatic potentials.

Typical simulation runtime : Less than a minute

Improvements / modifications in subsequent version releases:

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PADRE (Pisces And Device REplacement) developed by Mark Pinto & Kent Smith at AT&T Bell Labs.

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Cite this work

Researchers should cite this work as follows:

  • Gerhard Klimeck; Saumitra Raj Mehrotra; Nicholas K Kisseberth; Abhijeet Paul (2014), "Drift-Diffusion Lab," (DOI: 10.4231/D36Q1SG88).

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Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.