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A bipolar junction transistor (BJT) is a three-terminal device constructed of doped semiconductor material and may be used in amplifying or switching applications. Bipolar transistors are so named because their operation involves both electrons and holes. Although a small part of the transistor current is due to the flow of majority carriers, most of the transistor current is due to the flow of minority carriers, and so BJTs are classified as “minority-carrier” devices.
This tool allows Bipolar Junction Transistor (BJT) simulation using a 2D mesh. It allows the user to simulate an npn- or pnp- type of device in common-emitter and common-base configurations. Users can specify the Emitter, Base and Collector region depths and doping densities. Also, the material and minority carrier lifetimes can be specified by the user.
Typical simulation run time LINEAR: ~ 2 minutes
Typical simulation run time DISCRETE: ~ 4 minutes
If you want to know more about the physics of the operation of BJT plese refer to the following slides:
BJT Operation Description
Example Problems for BJT:
BJT Theoretical Exercise
BJT tool wish list :
Upgrading to include HBT simulations.
Improvements / modifications in subsequent version releases:
PADRE (Pisces And Device REplacement) developed by Mark Pinto & Kent Smith at AT&T Bell Labs.
Researchers should cite this work as follows: