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Quantum and Semi-classical Electrostatics Simulation of SOI Trigates

By Andres Godoy1, Hyung-Seok Hahm2

1. University of Granada, Spain 2. University of Illinois at Urbana-Champaign

Generate quantum/semi-classical electrostatic simulation results for a simple Trigate structure

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Archive Version 1.9
Published on 01 Apr 2008, unpublished on 02 Apr 2008
Latest version: 2.0.1. All versions

doi:10.4231/D30P0WQ44 cite this

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Abstract

The application was originally written in Matlab by Andres Godoy at University of Granada, Spain, and later rappturized by Hyung-Seok Hahm at University of Illinois at Urbana-Champaign.

It generates both quantum mechanical and classical electrostatic simulation results in a cross section (perpendicular to the transport direction) for two dimensional (2D) Trigate structures.

2D Poisson and Schroedinger equations are self-consistenly solved for this kind of devices. The user can select the dimensions of the silicon width (WSi), height (HSi), the gate oxide thickness (Tox) and the buried oxide thickness (TBox), and the applied gate voltage (Vg).

Other important simulation conditions are

- Room temperature: 300K
- Metal Gate Work Function: 4.61(eV)
- Substrate Doping: Na=1.0e12 Nd=1.0e10
- Orientation of a plane for the oxide interface and the cross-section: 100

The current version provides the following results:

- Classical Electron Density
- Classical Potential Distribution
- Quantum Electron Density
- First 6 Wavefunction Distribution

In case you include a simulation result in your publication, please cite the tool as the following:

* Electrostatic simulation of SOI Trigates at http://www.nanohub.org by Hyung-Seok Hahm and Andres Godoy

* F.J. Garcia Ruiz, A. Godoy, F. Gamiz, C. Sampedro, and L. Donetti, “A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects” IEEE Trans. Electron Devices, vol. 54(12), pp. 3369-3377, 2007.

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