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Quantum and Semi-classical Electrostatics Simulation of SOI Trigates

By Hyung-Seok Hahm1, Andres Godoy2

1. University of Illinois at Urbana-Champaign 2. University of Granada, Spain

Generate quantum/semi-classical electrostatic simulation results for a simple Trigate structure

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This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 2.0
Published on 02 Apr 2008, unpublished on 19 Oct 2009
Latest version: 2.0.1. All versions

doi:10.4231/D3VX0629X cite this

This tool is closed source.



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The application was originally written in Matlab by Andres Godoy at University of Granada, Spain, and later rappturized by Hyung-Seok Hahm at University of Illinois at Urbana-Champaign.

It generates both quantum mechanical and classical electrostatic simulation results in a cross section (perpendicular to the transport direction) for two dimensional (2D) Trigate structures.

2D Poisson and Schroedinger equations are self-consistenly solved for this kind of devices. The user can select the dimensions of the silicon width (WSi), height (HSi), the gate oxide thickness (Tox) and the buried oxide thickness (TBox), and the applied gate voltage (Vg).

Other important simulation conditions are

- Room temperature: 300K
- Metal Gate Work Function: 4.61(eV)
- Substrate Doping: Na=1.0e12 Nd=1.0e10
- Orientation of a plane for the oxide interface and the cross-section: 100

The current version provides the following results:

- Classical Electron Density
- Classical Potential Distribution
- Quantum Electron Density
- First 6 Wavefunction Distribution

In case you include a simulation result in your publication, please cite the tool as the following:

* Electrostatic simulation of SOI Trigates at by Hyung-Seok Hahm and Andres Godoy

* F.J. Garcia Ruiz, A. Godoy, F. Gamiz, C. Sampedro, and L. Donetti, “A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects” IEEE Trans. Electron Devices, vol. 54(12), pp. 3369-3377, 2007.

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.