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Jean-Pierre Leburton's research at the Beckman Institute deals with transport and optical processes in semiconductor nanostructures such as quantum wires and quantum dots that exhibit a high degree of quantization dependent on the semiconductor materials and geometrical confinement. This important property has far-reaching technological consequences as it creates new opportunities for making high performance electronic and photonic devices with non-conventional quantum mechanical principles of operation. More recently, Leburton's research has focused on the manipulation of spin effects in quantum nanostructures for applications in solid state quantum computing. He is also involved in the investigation of protein and DNA molecule transport in artificial silicon ion channels and the design of a novel nanoscale detector for DNA sequencing. His approach to these problems involves use of advanced numerical techniques such as three-dimensional self-consistent Schroedinger-Poisson modeling based on the density functional theory.
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Matagne, P and Leburton J.P., (2003), “Quantum Dots: Artificial Atoms and Molecules,” in S. Bandyopadhayay and H.S. Nalwa, eds., Advances in Nanophase Materials and Nanothechnology, American Scientific Publishers Series, pp. 1-66.
Thean, V-Y. and Leburton, J.P., (2002), “Flash Memory: Toward Single Electronics,” IEEE Potentials, Oct-Nov., pp. 35-41.
Sheng, Weidong and Leburton, J.P., (2002), “Anomalous Quantum Confined Stark Effect in Stacked InAs/GaAs Self-Assembled Quantum Dots,” Physical Review Letters, 88, p. 167401.
Leburton, J.-P. (1999), “Photo-refractive Properties of GaAs and Superlattices,” in J. Webster, ed., Encyclopedia of Electrical and Electronic Engineers, 16, pp. 366-377, Wiley Publishing Corporation.
Researchers should cite this work as follows:
J. P. Leburton (2008), "P-N Semiconductor Membranes for Ion Filtering and Rectification," https://nanohub.org/resources/4245.