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Bulk Monte Carlo Lab

By Dragica Vasileska1, Mark Lundstrom2, Gerhard Klimeck2, Stephen M. Goodnick1

1. Arizona State University 2. Purdue University

This tool calculates the bulk values of the carrier drift velocity, average electron energy and electron mobility given the electric field value in arbitrary crystalographic direction

Launch Tool

This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.

Archive Version 1.0
Published on 21 Aug 2008, unpublished on 19 Oct 2009
Latest version: 2.0. All versions

doi:10.4231/D3H70804F cite this

This tool is closed source.



Published on


The Bulk Monte Carlo Tool calculates the bulk values of the electron drift velocity, electron average energy and electron mobility for electric fields applied in arbitrary crystallographic direction in both column 4 (Si and Ge) and III-V (GaAs, SiC and GaN) materials. All relevant scattering mechanisms for the materials being considered have been included in the model. Detailed derivation of the scattering rates for most of the scattering mechanisms included in the model can be found on Prof. Vasileska personal web-site (look under class EEE534 Semiconductor Transport).

Description of the Monte Carlo method used to solve the Boltzmann Transport Equation and implementation details of the tool are given in the

Available also is a voiced presentation

that gives more insight on the implementation details of the Ensemble Monte Carlo technique for the solution of the Boltzmann Transport Equation.

Examples of simulations that can be performed with this tool are given below:

Tags, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.