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MOSCap

By Akira Matsudaira1, Shaikh S. Ahmed2, Gerhard Klimeck3, Dragica Vasileska4

1. University of Illinois at Urbana-Champaign 2. Southern Illinois University Carbondale 3. Purdue University 4. Arizona State University

capacitance of a MOS device

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Archive Version 1.0
Published on 02 Nov 2005, unpublished on 23 Jul 2008
Latest version: 1.8. All versions

doi:10.4231/D32Z12P2J cite this

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Abstract

MOSCap simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual -gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature, doping concentration and applied frequency. Among the quantities simulated, the low and high -frequency capacitance-voltage (CV) characteristics and various spatial profiles (energy band, vertical electric field, charge densities etc.) are of special importance. MOSCap is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

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