By Matteo Mannino1, Shaikh S. Ahmed2, Gerhard Klimeck1, Dragica Vasileska3, Xufeng Wang1, Himadri Pal1, Saumitra Raj Mehrotra1, Gloria Wahyu Budiman1

1. Purdue University 2. Southern Illinois University Carbondale 3. Arizona State University

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

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Archive Version 1.8.2
Published on 08 Sep 2011 All versions

doi:10.4231/D3RF5KF63 cite this



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The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET). MOSFet tool simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles. Teachnig Material and Exercises: Upgrades with subsequent versions:
  • 1.8.2: Increased Lc (Lsd) limit to 100 um.
  • 1.8.1: Fixed minor bug for SOI-MOSFET simulations.
  • 1.8: Fixed for oxide dielectric constant (was redundant parameter before).
  • 1.6: Added Surface Charge-Vg plot for NMOS and PMOS.
  • 1.5: Improved meshing for Imapct Ionization simulations.
  • 1.4: Fixed axes units. Added option for Energy balance transport
  • 1.3.1: Added status bar for running simulation.
  • 1.3: Dynamic contour plot replaces static MATLAB-driver contour plot. This feature fulfills this wish
MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.

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PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.

Cite this work

Researchers should cite this work as follows:

  • Matteo Mannino; Shaikh S. Ahmed; Gerhard Klimeck; Dragica Vasileska; Xufeng Wang; Himadri Pal; Saumitra Raj Mehrotra; Gloria Wahyu Budiman (2017), "MOSFet," (DOI: 10.4231/D3RF5KF63).

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