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The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET).
MOSFet tool simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles.
Teachnig Material and Exercises:
MOSFET Operation Description
MOSFET Exercise: Long channel vs. short channel device
MOSFET Exercise: DIBL effect in short channel devices
MOSFET Exercises: Series Resistance, Punchthrough and Impact Ionization
SOI Exercise: Basic Operation of n-channel SOI Device
Upgrades with subsequent versions:
- 8.3: Increased the axes limit for 1D plots.
- 8.2: Increased Lc (Lsd) limit to 100 um.
- 8.1: Fixed minor bug for SOI-MOSFET simulations.
- 8: Fixed for oxide dielectric constant (was redundant parameter before).
- 6: Added Surface Charge-Vg plot for NMOS and PMOS.
- 5: Improved meshing for Imapct Ionization simulations.
- 4: Fixed axes units. Added option for Energy balance transport
- 3.1: Added status bar for running simulation.
- 3: Dynamic contour plot replaces static MATLAB-driver contour plot. This feature fulfills this wish
MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.
PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.
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