Support

Support Options

Submit a Support Ticket

 
Home › Resources › Tools › MOSFet › About
This resource has a 7.6 Ranking

Ranking is calculated from a formula comprised of user reviews and usage statistics. Learn more ›

Usage Stats
Total: updated 02 Jan, 2012
Users: 3309
Jobs: 48827
Avg. exec. time: 6 mins
Reviews & Citations
Google/IEEE
Avg. Review: 4.0 out of 5 stars
Citations: 4
  •  
  •  
  •  
  •  
  •  
  • Intermediate-Advanced
Difficulty Level Target Audience
  •  
  •  
  •  
  •  
  •  
 K-12 Middle/High School
  •  
  •  
  •  
  •  
  •  
 Easy Freshmen/Sophomores
  •  
  •  
  •  
  •  
  •  
 Intermediate Juniors/Seniors
  •  
  •  
  •  
  •  
  •  
 Advanced Graduate Students
  •  
  •  
  •  
  •  
  •  
 Expert PhD Experts

Learn more ›

NCN Supported

3513 user(s), detailed usage

771 users in 76 class(es)

4 Citation(s)

13 questions (Ask a question)

5 review(s) (Review this)

1 wish(es) (Add a new wish)

MOSFet

By Shaikh S. Ahmed1, Saumitra Raj Mehrotra2, Matteo Mannino2, Gerhard Klimeck2, Dragica Vasileska3, Xufeng Wang2, Himadri Pal2, Gloria Wahyu Budiman2

1. Southern Illinois University Carbondale 2. Purdue University 3. Arizona State University

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

Launch Tool

You must login before you can run this tool.

Version 1.8.5 - published on 01 Nov 2011

doi:10.4231/D30V89G8N cite this

This tool is closed source.

First-Time User Guide View All Supporting Documents

SCREENSHOT #1 SCREENSHOT #2 Double Gate MOSFET SCREENSHOT #4 SCREENSHOT #5 SCREENSHOT #6 SCREENSHOT #7 SCREENSHOT #8
Category Tools
Abstract The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET). MOSFet tool simulates the current-voltage characteristics for bulk and SOI Field Effect Transistors (FETs) for a variety of different device sizes, geometries, temperature and doping profiles. Teachnig Material and Exercises: Upgrades with subsequent versions:
  • 1.8.5: Minor fix regarding the display of 1D plots for the Final Bias.
  • 1.8.4: Minor fix regarding the display of 1D plots.
  • 1.8.3: Increased the axes limit for 1D plots.
  • 1.8.2: Increased Lc (Lsd) limit to 100 um.
  • 1.8.1: Fixed minor bug for SOI-MOSFET simulations.
  • 1.8: Fixed for oxide dielectric constant (was redundant parameter before).
  • 1.6: Added Surface Charge-Vg plot for NMOS and PMOS.
  • 1.5: Improved meshing for Imapct Ionization simulations.
  • 1.4: Fixed axes units. Added option for Energy balance transport
  • 1.3.1: Added status bar for running simulation.
  • 1.3: Dynamic contour plot replaces static MATLAB-driver contour plot. This feature fulfills this wish
MOSFET lab is based on the Padre simulation tool developed by Mark Pinto, R. Kent Smith, and Ashraful Alam at Bell Labs.
Powered by

PADRE (Pisces And Device REplacement) developed by Mark Pinto at AT&T Bell Labs.

Cite this work

Researchers should cite this work as follows:

  • Shaikh S. Ahmed; Saumitra Raj Mehrotra; Matteo Mannino; Gerhard Klimeck; Dragica Vasileska; Xufeng Wang; Himadri Pal; Gloria Wahyu Budiman (2011), "MOSFet," http://nanohub.org/resources/mosfet. (DOI: 10.4231/D30V89G8N).

    BibTex | EndNote

Tags
  1. ABACUS 1
  2. drift-diffusion 1
  3. MOSFET 1
  4. nanoelectronics 1
  5. NCN@Purdue Supported 1
  6. NCN Supported 1

Get Help

Get Involved

Legal

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies.